In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.

A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N.sub.2 atmosphere at not less than 650 C. or in a N.sub.2+O.sub.2 atmosphere at not less than 500 C.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A method of manufacturing a nitride semiconductor element includes: providing a first light emission part comprising a first n-side semiconductor layer, a first active layer formed on the first n-side semiconductor layer, and a first p-side semiconductor layer formed on the first active layer; forming a first layer such that the first layer contains an n-type impurity of a first concentration; forming a second layer such that the second layer contains an n-type impurity of a second concentration lower than the first concentration, wherein a thickness of the second layer is greater than a thickness of the first layer; and forming a second light emission part comprising: a second n-side semiconductor layer such that the second n-side semiconductor layer contains an n-type impurity of a third concentration lower than the first concentration and the second concentration, a second active layer, and a second p-side semiconductor layer.

There are provided a light-emitting element, an optical detection module, a method for manufacturing a light-emitting element, and a scanning electron microscope using the same, by which it is possible to reduce crosstalk and expand the range of applications. A light-emitting element includes a fiber optic plate substrate having transparency to fluorescence and a light-emitting layer as a nitride semiconductor layer having a quantum well structure. In the light-emitting element, the fiber optic plate substrate and the light-emitting layer are directly bonded to each other.

A high electron mobility transistor epitaxial structure includes a substrate, a nucleation layer, a buffer layer, a first nitride layer, a second nitride layer, a channel layer, and a barrier layer. The nucleation layer is located above the substrate. The buffer layer is located above the nucleation layer. The first nitride layer is located above the buffer layer and is in contact with the buffer layer. The second nitride layer is located above the first nitride layer and is in contact with the first nitride layer. A film thickness of the first nitride layer is less than a film thickness of the second nitride layer. The second nitride layer is carbon doped. A carbon concentration of the first nitride layer is less than a carbon concentration of the second nitride layer. The channel layer is located above the second nitride layer.

A method for epitaxy of a high electron mobility transistor includes: provide a substrate; form a nucleation layer on the substrate; form a buffer layer on the nucleation layer; form a first nitride layer being in contact with the buffer layer on the buffer layer; form a second nitride layer being in contact with the first nitride layer on the first nitride layer, and perform carbon doping on the second nitride layer; form a channel layer on the second nitride layer; and form a barrier layer on the channel layer; a two-dimensional electron gas is formed in the channel layer along an interface between the channel layer and the barrier layer; a growth temperature of the second nitride layer is less than a growth temperature of the first nitride layer; a film thickness of the first nitride layer is less than a film thickness of the second nitride layer.

A method of manufacturing a light-emitting element, including: provide a substrate; form a nucleation layer above the substrate; form a buffer layer above the nucleation layer; form a first nitride layer being in contact with the buffer layer above the buffer layer; form a second nitride layer being in contact with the first nitride layer above the first nitride layer; form a first semiconductor layer above the second nitride layer; form a light-emitting layer above the first semiconductor layer; form a second semiconductor layer above the light-emitting layer. The light-emitting layer is adapted to emit light when electrons and holes recombine. A film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer, and a growth pressure of the first nitride layer is smaller than a growth pressure of the second nitride layer.

A light-emitting element structure includes a substrate, a nucleation layer located above the substrate, a buffer layer located above the nucleation layer, a first nitride layer located above the buffer layer and being in contact with the buffer layer, a second nitride layer located above the first nitride layer and being in contact with the first nitride layer, a first semiconductor layer located above the second nitride layer, a light-emitting layer, and a second semiconductor layer located above the light-emitting layer. A film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer. A dislocation defect density of the second nitride layer is smaller than or equal to 310.sup.9 cm.sup.2. The light-emitting layer is located above the first semiconductor layer and is adapted to emit light when electrons and holes recombine.

A display device comprises a substrate, and a first light emitting element, a second light emitting element, and a third light emitting element provided on the substrate and each including a first semiconductor layer, an active layer, and a second semiconductor layer. A third semiconductor layer is provided on the first light emitting element, a first color conversion layer is provided on the second light emitting element, and a second color conversion layer is provided on the third light emitting element, wherein the first color conversion layer and the second color conversion layer include the same semiconductor material as the third semiconductor layer, and further include dopants different from that of the second semiconductor layer.