A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 110.sup.9 pieces to 110.sup.11 pieces per cm.sup.2. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.

A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.

A semiconductor light emitting device includes: an n-type clad layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material containing silicon (Si); an intermediate layer provided on the n-type clad layer and containing Si; an active layer of an AlGaN-based semiconductor material provided on the intermediate layer; and a p-type semiconductor layer provided on the active layer. A distribution of an Si concentration in a direction in which the n-type clad layer, the intermediate layer, and the active layer are stacked has a local peak at least at a position of the intermediate layer.

A GaN-on-Si epiwafer forming a layer stack is described. The epiwafer including a substrate, a strain-decoupling layer including a surface recovery layer and a self-organized template layer arranged directly on the substrate, the self-organized template layer comprising pits, and comprising GaN, the surface recovery layer having a substantially smooth surface, and a strain-engineering sub-stack arranged on the self-organized template layer and comprising at least one GaN layer and at least one Al.sub.xGa.sub.1?xN intermediate layer.

A method of manufacturing a light emitting element includes: an n-side nitride semiconductor layer growing process in which an n-side nitride semiconductor layer is grown; an active layer growing process in which an active layer comprising a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers is grown on the n-side nitride semiconductor layer, wherein the active layer is configured to emit ultraviolet light; and a p-side nitride semiconductor layer growing process in which a A-side nitride semiconductor layer is grown on the active layer. The active layer growing process includes: a first barrier layer growing process, a second barrier layer growing process, and a well layer growing process.

The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in: forming (2) III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being adapted to favor lateral growth of said crystals such as to induce overlapping between adjacent III-nitride crystals, and continuing growth until coalescence of the III-nitride crystals to form a layer of coalesced III-nitride crystals; forming (3) a two-dimensional III-nitride layer on the layer of coalesced III-nitride crystals.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.