A monolithic display/projector is disclosed comprising a single die having an array of mechanically isolated LED pillars. Each pillar has a height greater than its width, and a pitch between pillars is less than the heights of the pillars. The die comprises an LED display portion bonded to a silicon substrate addressing portion, with one metal contact per pixel. The resolution of the display is preferably about the same as the resolution of the human retina when projected onto the human retina so that the image projected onto the retina may be indistinguishable from the real world. The display may be encapsulated into a contact lens with a focusing optic embedded into the contact lens. To electrically contact the N-type semiconductor layer, the pillars are surrounded by a reflective cathode metal mesh so that the cathode current is coupled through the vertical sides of the N-type layer. The metal mesh mechanically connects the isolated LED pillars and optically isolates each LED pillar. The active layers may emit blue light, and wavelength conversion layers may be used to generate red and green light.

In some embodiments, the techniques described herein relate to an epitaxial oxide transistor. The transistor can include: a substrate; a channel layer including a first epitaxial semiconductor layer on the substrate; a gate layer including a second epitaxial semiconductor layer on the first epitaxial semiconductor layer; a source electrode and a drain electrode coupled to the channel layer; and a gate electrode coupled to the gate layer. The first epitaxial semiconductor layer can include a first polar oxide material and the second epitaxial semiconductor layer can include a second polar oxide material. The first polar oxide material and the second polar oxide material can include cation-polar surfaces oriented towards or away from the substrate, and the second polar oxide material can include a wider bandgap than the first polar oxide material.

A method for manufacturing a vertical blue light emitting diode (LED) includes: bonding a growth substrate to a conductive substrate; peeling off the growth substrate; etching the nitride epitaxial layer to remove the buffer layer and the undoped GaN layer and to thin the N-type GaN layer, such that a thickness of a residual nitride epitaxial layer is less than a wavelength of blue light; and forming an N-type electrode on a surface of a residual N-type GaN layer.

A light emitting module including a mounting substrate, light emitting chips mounted on the mounting substrate, and pads, in which the light emitting chips include a first substrate, a first light emitting unit on a first surface of the first substrate, a second substrate spaced apart from the first substrate, and a second light emitting unit on a second surface of the second substrate, the first substrate includes a first side surface including a first modified surface, and the second substrate includes a second side surface facing the first side surface and including a second modified surface, the first modified surface includes first modified regions extended in a thickness direction and first ruptured regions disposed therebetween, the second modified surface includes second modified regions extended in the thickness direction and second ruptured regions disposed therebetween, and the first ruptured regions have the same width as the second ruptured regions.

The present application relates to an LED epitaxial structure and the preparation method and application thereof. The LED epitaxial structure comprises a first multiple-quantum-well light-emitting layer and a second multiple-quantum-well light-emitting layer. The first multiple-quantum-well light-emitting layer comprises a first shoes layer, a first well layer, a first cap layer, and a first Barrier layer epitaxially grown from bottom to top in sequence. The second multiple-quantum-well light-emitting layer comprises a second shoes layer, a second well layer, a second cap layer, and a second Barrier layer epitaxially grown from bottom to top in sequence. The technical solutions disclosed in the present application can solve the problem that the 365 nm to 375 nm wave band LED would emit yellow light.

A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0?10.sup.21 cm.sup.?3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

The invention relates to a method for producing an optoelectronic semiconductor chip, component, including the following steps: providing an epitaxial semiconductor layer sequence with an active zone, which is configured to generate electromagnetic radiation during operation, structuring the epitaxial semiconductor layer sequence so that at least one lateral surface is produced in the epitaxial semiconductor layer sequence, introducing aluminum atoms at the lateral surface into the epitaxial semiconductor layer sequence, so that a band gap of the active zone at the lateral surface is increased. The invention also relates to an optoelectronic semiconductor chip.

There is described a substrate for a semiconductor device. The substrate generally has a semiconductor wafer; an intermediate nanowire layer having a plurality of nanowires each having in succession a base portion mounted to the semiconductor wafer, an elongated body portion extending away from the semiconductor wafer, and a tip portion; and a buffer layer of aluminum nitride being made integral to the tip portions of the plurality of nanowires.

A light emitting element includes: a first semiconductor layer; an active layer provided on the first semiconductor layer; a second semiconductor layer provided on the active layer; and an insulative film around at least a portion of the first semiconductor layer, the active layer, and the second semiconductor layer, which are sequentially provided in a first direction. The active layer may include a first barrier layer, a first well layer, and a second barrier layer, which are sequentially provided in the first direction, and the first well layer may include first holes penetrating the first well layer.

A method of manufacturing a nitride semiconductor device includes: forming, on or above a p-type nitride semiconductor tunnel junction layer, a first n-type nitride semiconductor layer that forms a tunnel junction with the p-type nitride semiconductor tunnel junction layer, the first n-type nitride semiconductor layer having a first impurity concentration and a first thickness; forming, on or above the first n-type nitride semiconductor layer, in a nitrogen atmosphere, a second n-type nitride semiconductor layer having a second n-type impurity concentration less than the first n-type impurity concentration and a second thickness; and forming, on or above the second n-type nitride semiconductor layer, in a hydrogen atmosphere, a third n-type nitride semiconductor layer having a third n-type impurity concentration less than the first n-type impurity concentration and a third thickness.