Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type Al.sub.zGa.sub.1-zN (0.50?z?0.80), and the barrier layers are made of n-type Al.sub.bGa.sub.1-bN (z+0.01?b?0.95).

A growth substrate adapted for making by epitaxy an array of InGaN based diodes, including mesas M.sub.(i), made of GaN based crystalline materials, each including N doped layers, with N?2, separated in pairs by an insulation intermediate layer made of a non-porous material, and each having a free upper face adapted for making a diode of the array by epitaxy; the mesas being configured according to at least three different categories including: a so-called M.sub.(N) mesas category where the N doped layers are porous; a so-called M.sub.(0) mesas category where none of the doped layers (13, 15) is porous; and a so-called M.sub.(n) mesas category where n doped layers are porous, with 1?n<N.

A light emitting device including a substrate having a light emitting area and a light shielding area, a light emitting structure disposed on the substrate and comprising at least one active layer, and a light shielding layer disposed on the substrate and defining the light shielding area, in which the light emitting area overlaps with the light emitting structure, the substrate has a rough surface overlapping at least a portion of the light emitting area, and a portion of the rough surface is covered with the light shielding layer, and light emitted from the at least one active layer is configured to be transmitted through the substrate.

A method of controlling bow in a layered semiconductor structure comprises the steps of: providing a layered semiconductor structure comprising a first layer of III-nitride semiconductor material on a substrate, the layered semiconductor structure having a first bow, and forming a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material, in which the layered semiconductor structure comprising the porous region has a second bow different from the first bow. A semiconductor structure having controllable bow comprises a first layer of III-nitride semiconductor material on a substrate, and a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material. The layered semiconductor structure comprising the porous region has a second bow, and the second bow is tunable by tuning a porosity and/or thickness of the porous region.

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a silicon substrate having several through-silicon-vias therein; a first semiconductor layer located in each through-silicon-via and on the silicon substrate, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer, where a conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer, a material of the first semiconductor layer a group III nitride, a material of the active layer a group III nitride, and a material of the second semiconductor layer include a group III nitride.

A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.

An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

A method for fabricating a micro-LED module is disclosed. The method includes: preparing a micro-LED including a plurality of electrode pads and a plurality of LED cells; preparing a submount substrate including a plurality of electrodes corresponding to the plurality of electrode pads; and flip-bonding the micro-LED to the submount substrate through a plurality of solders located between the plurality of electrode pads and the plurality of electrodes. The flip-bonding includes heating the plurality of solders by a laser.

A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.