Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.

A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

As described, a GaN-based light-emitting diode includes a n-GaN based electron injection region, a p-GaN based hole injection region, an active region located between the electron injection region and the hole injection region, configured to emit a light radiation, a hydrogen blocking layer, the light-emitting diode being wherein the hole injection region includes at least one activated portion and at least one inactivated portion such that the activated portion has an acceptor concentration at least ten times greater than an acceptor concentration of the inactivated portion, and in that the at least one inactivated portion is interposed between the electron injection region and the hydrogen blocking layer, so that the hydrogen blocking layer prevents a release of hydrogen from the inactivated portion. Also described is a method for manufacturing such an LED.

According to an embodiment of the present invention, a removal module using an electric field and a magnetic field so as to self-assemble, on cells arranged in a matrix form of an assembly substrate, semiconductor light-emitting elements introduced in a fluid accommodated in a chamber, and then remove a semiconductor light-emitting element mis-assembled with the assembly substrate comprises: a fluid supply unit for supplying the fluid; and a housing of which one side is connected to the fluid supply unit, an upper plate is adjacent to the assembly substrate, and a lower plate is adjacent to the chamber, wherein the upper plate has: a nozzle hole allowing communication between the inner space of the housing and the inner space of the chamber so that the fluid supplied from the fluid supply unit is injected at a site in which the semiconductor light-emitting element is mis-assembled on the assembly substrate; and one pair of partition parts facing each other with the nozzle hole as the center thereof.

Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.

The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

A device includes a light emitting diode (LED) configured to emit light characterized by a peak wavelength, a lower wavelength band extending across lower wavelengths than the peak wavelength, and a higher wavelength band extending across higher wavelengths than the peak wavelength. The device also includes a reflector positioned in a first direction from the LED. The device also includes a distributed Bragg reflector (DBR) having a lower reflectance than the reflector, positioned in a second direction from the LED opposite the first direction, and configured to block light within a stopband overlapping a portion of the lower wavelength band or a portion of the higher wavelength band but not overlapping the peak wavelength, such that the DBR propagates filtered light in the second direction.

A method of fabricating a semiconductor device includes forming, above a substrate surface, a plurality of distributed Bragg reflector (DBR) layers to form a DBR; forming, above the DBR, a first light emitting diode (LED) configured to emit light; and forming, above the first LED, a first reflector having a higher reflectance than the DBR, such that the first reflector and the DBR define a first resonant cavity having a length effective to collimate a first wavelength of the light emitted by the first LED and propagate the collimated light of the first wavelength through the DBR.