The present application illustrates an AlN layer, a fabrication process and an epitaxial wafer, wherein the AlN layer is provided on a substrate layer, the substrate layer comprising a body and a protrusion, and the AlN layer comprising a first layer and a second layer; the first layer is disposed on the substrate; the second layer is disposed on the first layer; the AlN layer is layered or nucleated, the layered AlN layer is disposed on the body, and the nucleated AlN layer is disposed on the protrusion. The surface of the AlN layer fabricated according to the technical solution illustrated in the present application is uniform, and the surface roughness thereof can match a LED epitaxial wafer better.

A display device includes pixel electrodes on a substrate, light-emitting elements on the pixel electrodes, a planarization layer on the pixel electrodes to fill a space between the light-emitting elements, and a common electrode on the planarization layer and the light-emitting elements, wherein each of the light-emitting elements includes a first light-emitting element stack and a second light-emitting element stack on the first light-emitting element stack.

A method for manufacturing a display panel (10), the display panel (10), and a display apparatus (20) are provided. The method includes the following. A first substrate (110) and a second substrate (120) are provided, where the first substrate (110) includes a growth substrate (111), an epitaxial structure (112), and a first metal layer (113) that are sequentially stacked, and the second substrate (120) includes a circuit substrate (121) and a second metal layer (122) stacked on the circuit substrate (121). An activation treatment is performed on the first metal layer (113) and the second metal layer (122). The first metal layer (113) and the second metal layer (122) are bonded after the activation treatment, to cause the growth substrate (111), the epitaxial structure (112), the first metal layer (113), the second metal layer (122), and the circuit substrate (121) sequentially stacked. The growth substrate (111) is lift off.

Method for cleaning and encapsulating microLED features are disclosed. Some embodiments provide for a wet clean process and a dry clean process to remove contaminants from the microLED feature. Some embodiments provide for the encapsulation of a clean microLED feature. Some embodiments provide improved crystallinity of the microLED feature and the capping layer. Some embodiments provide improved EQE of microLED devices formed from the disclosed microLED features.

A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

An image display element, provided with a pixel region and a connection region, includes a light-emitting unit and a driving circuit substrate. The light-emitting unit includes a semiconductor layer obtained by layering a second conductive layer, a light-emitting layer, and a first conductive layer, mesa shapes formed by dividing the semiconductor layer, and a step portion separated from the mesa shapes by a groove. A first electrode is connected to the first conductive layer and a first driving electrode. The light-emitting unit further includes, between the mesa shapes adjacent to each other, a wiring line layer forming a conductive path, the wiring line layer being thinner than a layer thickness of a portion of each of the mesa shapes in the semiconductor layer. The wiring line layer extends to a top of the step portion and is connected to a common second electrode provided on the step portion.

A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.

A spherical light-emitting chip and a manufacturing method thereof, and a display device are provided. The spherical light-emitting chip includes a light-emitting layer, a first electrode, a second electrode, and an alignment guiding layer. The first electrode is spaced apart from the light-emitting layer. The second electrode is spaced apart from the light-emitting layer. The second electrode and the first electrode are configured to load a voltage to enable the light-emitting layer to emit light. The spherical light-emitting chip has a central axis passing through a sphere center of the spherical light-emitting chip. The second electrode extends in a direction of the central axis, and the central axis passes through the second electrode. The alignment guiding layer is arranged around the second electrode, and a surface of the alignment guiding layer surrounding the second electrode is in contact with a peripheral side surface of the second electrode.

In an embodiment a growth substrate includes a substrate and a buffer layer sequence having a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers, wherein the semiconductor layers and the buffer layers are arranged alternatingly, and wherein the buffer layers comprise at least one of the following two-dimensional layered materials: graphene, boron nitride, MoS.sub.2, WSe.sub.2 or fluorographene.

A method of manufacturing a light emitting element, comprising patterning a first base area of a growth base, forming semiconductor layers, and patterning a portion of a second base area of the growth base, different from the first base area. A resulting light emitting element, and a display device including such a light emitting element are included.