Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

A semiconductor light-emitting element has an n-type semiconductor layer arranged on a base layer, and is made of an n-type AlGaN-based semiconductor material; an active layer arranged on the n-type semiconductor layer, and is made of an AlGaN-based semiconductor material; a p-type semiconductor layer arranged on the active layer; a p-side contact electrode that contacts the top face of the p-type semiconductor layer; a dielectric protective layer that covers the p-side contact electrode, contacts the top face of the p-type semiconductor layer, and is made of SiO.sub.2; and a dielectric cover layer that contacts the individual side faces of the active layer and the p-type semiconductor layer, contacts the top face of the p-type semiconductor layer, covers the dielectric protective layer, and is made of Al.sub.2O.sub.3.

A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μm.sup.2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.

A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.

A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al.sub.1Ga.sub.1N.sub.2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al.sub.1Ga.sub.2N.sub.3.

Disclosed are a light emitting diode with a vertical structure and a manufacturing method thereof. The manufacturing method includes: forming a metal atom layer on a substrate, the substrate being an n-type substrate; forming an n-type buffer layer on the metal atom layer; forming a light emitting structure on the n-type buffer layer, the light emitting structure including an n-type semiconductor layer, an active layer and a p-type semiconductor layer from bottom to top; disposing a p electrode on the light emitting structure; and disposing an n electrode on one side, away from the metal atom layer, of the substrate. The n-type substrate with conductivity is adopted, and the metal atom layer and the n-type buffer layer are sequentially formed on the n-type substrate, so that conductivity of a device with the vertical structure can be ensured, and stripping and bonding are not needed.

Disclosed are a diode and a manufacturing method thereof. The diode includes: a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1×10.sup.18 cm.sup.−3; a metal atomic layer located on a first surface of the first substrate; an epitaxial structure located on the metal atomic layer; a first electrode located on the epitaxial structure; and a second electrode located on a second surface, opposite to the first surface, of the first substrate. The diode significantly reduces forward conduction voltage drop.

The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, which method is intended to grow semiconductor layers with high crystallinity on a sapphire substrate having a small area ratio of a base surface to a main surface. In preparing a substrate, a substrate is prepared, of which a main surface has a c-plane base surface and a plurality of projections protruding from the base surface, and the area ratio of the base surface to the main surface is 8% to 32%. In preparing an AlN buffer layer, the AlN buffer layer having a thickness of 34 nm to 14 nm is formed through MOCVD. The thickness of the AlN buffer layer is decreased as the area ratio of the base surface to the main surface of the substrate is increased.