A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor

In a manufacturing method of a semiconductor element of the present disclosure, a first semiconductor part (SL1) includes a protruding portion (TS) protruding toward an underlying substrate (UK), the protruding portion contains a nitride semiconductor, the protruding portion and the underlying substrate are bonded to each other, a semiconductor substrate (HK) includes a hollow portion (TK) located between the underlying substrate and the first semiconductor part, the hollow portion is in contact with a side surface of the protruding portion and communicates with the outside of the semiconductor substrate, and the protruding portion (TS) is irradiated with the laser beam (LZ) before the first semiconductor part is separated from the semiconductor substrate.

A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on Al.sub.xGa.sub.1-xN (0<x≤1, x>y); and a monocrystalline Group III nitride semiconductor layer based on Al.sub.yGa.sub.1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

A display device includes a pixel circuit layer disposed on a substrate, a first electrode disposed on the pixel circuit layer, light emitting elements provided on the first electrode and electrically connected to the first electrode, a second electrode provided on the light emitting elements, and an insulating layer filling gaps between the light emitting elements between the first electrode and the second electrode. Each of the light emitting elements includes a first end and a second end, and the first end includes a curved surface.

A light-emitting element includes: a first light-emitting portion includes, in order upward from a lower side, a first n-side layer, a first active layer, and a first p-side layer disposed, each made of a nitride semiconductor; an intermediate layer disposed over the first light-emitting portion and made of a nitride semiconductor including an n-type impurity; and a second light-emitting portion disposed over the intermediate layer and comprising, in order upward from a lower side, a second n-side layer, a second active layer, and a second p-side layer, each made of a nitride semiconductor. An n-type impurity concentration in the intermediate layer is greater than an n-type impurity concentration in the first n-side layer. The first p-side layer includes: a first layer including aluminum and gallium, and a second layer disposed above the first layer, including aluminum and gallium.

An image display device includes a plurality of micro light-emission elements that constitute a pixel and that are provided on a driving circuit substrate. The micro light-emission element displays an image by emitting light to a side opposite to the driving circuit substrate. A light convergence portion that converges light is disposed in the pixel.

Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.