A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

A method of fabricating a micro light emitting diode (micro LED) apparatus includes forming a first substrate including a first silicon layer, a second silicon layer, and a silicon oxide layer sandwiched between the first silicon layer and the second silicon layer; forming a plurality of micro LEDs on a side of the second silicon layer distal to the silicon oxide layer; bonding the first substrate having the plurality of micro LEDs with a second substrate; and removing the silicon oxide layer and the first silicon layer.

Embodiments of the present disclosure provide a method of manufacturing an optoelectronic device epitaxial structure. The method includes forming a mask pattern on a base substrate, the mask pattern defining a plurality of growth regions on the base substrate, and the plurality of growth regions being separated from each other; and forming an optoelectronic device epitaxial structure in each of the plurality of growth regions; and removing the mask pattern.

Micro-LED structures for full color displays and methods of manufacturing the same are disclosed. An apparatus for a micro-LED display includes a first portion of a nanorod and a second portion of the nanorod. The first and second portions including gallium and nitrogen. The apparatus includes a polarization inversion layer between the first portion and the second portion. The apparatus includes a cap at an end of the nanorod. The cap including a core and an active layer. The core including gallium and nitrogen. The active layer including indium.

A RAMO.sub.4 substrate is formed from single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO.sub.4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

A method for fabrication a light emitting diode (LED) includes forming alternating material layers on an LED structure, formed on a substrate, to form a reflector on a back side opposite the substrate. A handle substrate is adhered to a stressor layer deposited on the reflector. The LED structure is separated from the substrate using a spalling process to expose a front side of the LED structure.

In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

As the pixel density of optoelectronic devices becomes higher, and the size of the optoelectronic devices becomes smaller, the problem of isolating the individual micro devices becomes more difficult. A method of fabricating an optoelectronic device, which includes an array of micro devices, comprises: forming a device layer structure including a monolithic active layer on a substrate; forming an array of first contacts on the device layer structure defining the array of micro devices; mounting the array of first contacts to a backplane comprising a driving circuit which controls the current flowing into the array of micro devices; removing the substrate; and forming an array of second contacts corresponding to the array of first contacts with a barrier between each second contact.

A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.

A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.