A fully transparent UV LED or far-UV LED is disclosed, in which all semiconductor layers except the active region are transparent to the radiation emitted in the active region. The key technology enabling this invention is the transparent tunnel junction, which replaces the optically absorbing p-GaN and metal mirror p-contact currently found in all commercially available UV LEDs. The tunnel junction also enables the use of a second n-AlGaN current spreading layer above the active region (on the p-side of the device) similar to the current spreading layer already found below the active region (on the n-side of the device). Therefore, small-area and/or remote p- and n-contacts can be used, and light can be extracted from both the top-side and bottom-side of the device. This fully transparent semiconductor device can then be packaged using transparent materials into a fully transparent UV LED or far-UV LED with high brightness and efficiency.

A monolithic semiconductor LED display system comprising a layered semiconductor material system fabricated to form a plurality of light emitting switch devices. Each of the light emitting switch devices extends along a different axis from a common substrate and comprises a driver device and a light emitting diode. Each of the driver devices comprises, in adjacent order from the substrate and in series, a first type of doped region, a second type of doped region and another of the first type of doped region. Areas of the layered semiconductor material system not utilized for the LED elements are fabricated to form circuitry in two or more of the doped regions for each of the light emitting switch devices.

The object of the present invention is to provide a Group III nitride semiconductor light emitting diode having improved light extraction efficiency. A Group III nitride semiconductor light emitting diode according to the present disclosure includes an RAMO.sub.4 layer including a single crystal represented by the general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn and Cd); and a layered product stacked on the RAMO.sub.4 layer. The layered product includes at least a light emitting layer including a Group III nitride semiconductor. A degree of flatness of a surface, of the RAMO.sub.4 layer, opposite to the layered product is lower than a degree of flatness of a surface, of the RAMO.sub.4 layer, adjacent to the layered product.

A method of manufacturing a light emitting element, comprises placing a plurality of mask patterns on a substrate, forming first patterns on the substrate through the plurality of mask patterns, the first patterns recessed from an upper surface of the substrate, forming an undoped semiconductor layer on the substrate on which the first patterns are formed, etching the undoped semiconductor layer, forming a first semiconductor layer on the undoped semiconductor layer, forming an active layer on the first semiconductor layer, forming a second semiconductor layer on the active layer, and forming an electrode layer on the second semiconductor layer, wherein the undoped semiconductor layer includes second patterns recessed from a lower surface of the undoped semiconductor layer.

A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.

Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.

An RGB full-color InGaN-based LED, a substrate material is covered with a lattice-matched 2D material ultra-thin layer in a surface as an intermediate layer, and an InGaN-based material epitaxial layer is grown on the 2D material ultra-thin layer; the 2D material ultra-thin layer is formed by a single material or formed by stacking more than one material. It can realize high-quality and high In content In.sub.xGa.sub.1-xN epitaxy on the currently available substrate surface, such that high-efficiency direct green/red light emitting diodes can be achieved, and the epitaxy and assembly processes can be simplified.

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.