A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.

A method of forming a plurality of devices on an engineered substrate structure includes forming an engineered substrate by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core with a first adhesion shell, encapsulating the first adhesion shell with a barrier layer, forming a bonding layer on the barrier layer, and forming a substantially single crystal layer coupled to the bonding layer. The method further comprises forming a buffer layer coupled to the substantially single crystal layer, forming one or more epitaxial III-V layers on the buffer layer according to requirements associated with the plurality of devices, and forming the plurality of devices on the substrate by removing a portion of the one or more epitaxial III-V layers disposed between the plurality of devices and removing a portion of the buffer layer disposed between the plurality of devices.

A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

A nanorod light-emitting diode includes a first conductivity-type semiconductor layer including a body having a cylindrical shape, and a hexagonal pyramid shape provided on the body, an active layer covering an upper surface of the hexagonal pyramid shape, a second conductivity-type semiconductor layer covering an upper surface of the active layer, an electrode layer covering an upper surface of the second conductivity-type semiconductor layer, and an insulating layer formed to surround a side surface of the body and to expose a lower region of the side surface of the body.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Embodiments provide a display device and a method for manufacturing the same. The display device includes a first electrode and a second electrode disposed on a substrate, spaced apart from each other, and extending in a direction, light-emitting elements disposed on the first electrode and the second electrode, an organic ligand having a polarity that is bonded to a portion of each of the light-emitting elements, a first connection electrode electrically connected to an end of each of the plurality of light-emitting elements, and a second connection electrode electrically connected to another end of each of the plurality of light-emitting elements. The end of each of the plurality of light-emitting elements electrically contacts the first electrode, and the another end of each of the plurality of light-emitting elements electrically contacts the second electrode.

Light emitting diode (LED) structures formed by metal-assisted chemical etching for microLED device applications include heterostructure micropillars on a substrate, where each heterostructure micropillar comprises a stack of semiconductor layers separated by heterojunctions. Sidewalls of the heterostructure micropillars are completely or substantially devoid of ion-induced defects. A method of forming an array of LED structures comprises: providing a sample to be etched, where the sample includes a heterostructure stack with metal catalyst regions on a top surface thereof, the heterostructure stack including a plurality of semiconductor layers separated by heterojunctions; exposing the sample to an etching solution or vapor; during the exposure to the etching solution or vapor, optionally illuminating the sample with above-gap radiation; and etching the semiconductor layers in a thickness direction between the metal catalyst regions, thereby forming an array of heterostructure micropillars, each covered with one of the metal catalyst regions.

The present disclosure provides an ultraviolet (UV) light-emitting diode (LED) and a manufacturing method thereof. The UV LED structure includes: a substrate, and an undoped AlN layer, an undoped AlGaN layer, an N-type doped AlGaN layer, an AlGaN quantum well structure, and an AlGaN electron barrier layer that are sequentially grown on one surface of the substrate; and P-type nanopillars vertically grown on the AlGaN electron barrier layer, where an N-electrode and a P-electrode are evaporated on the P-type nanopillar. In the UV LED structure according to the present disclosure, the diameter of the P-type nanopillar is controllable, and the density of the nanopillars is controllable. Metallic microbeads formed after annealing of a metal film are capable of guiding and catalyzing growth of nanopillars, such that the nanopillars grow vertically.