Disclosed are an LED structure, an LED device and a manufacturing method for the LED structure. The LED structure includes a substrate structure including a substrate and a plurality of first stress modulation layers located on the substrate periodically and separately; and a light-emitting unit located on the substrate structure; wherein the substrate structure includes a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths, which realizes a light-emitting unit with two kinds of main light-emitting wavelengths on the same substrate.

Disclosed are an LED structure, an LED device, and a manufacture method for the LED structure. The LED structure includes a substrate structure, and a first region and a second region are periodically provided in the substrate structure. The substrate structure includes a substrate and at least one patterned mask layer located on the substrate, the at least one patterned mask layer is located in the second region, and patterned mask layer in each second region are periodically provided. A light-emitting unit is located on the substrate structure, the light-emitting unit includes a first sub-light-emitting structure located in the first region and a second sub-light-emitting structure located in the second region, and light-emitting wavelengths of the first sub-light-emitting structure and the second sub-light-emitting structure are different. A light-emitting unit with two main light-emitting wavelengths is realized on a same substrate.

A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×10.sup.17 cm.sup.−3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

A display device including a substrate and a plurality of pixels in a display region of the substrate. Each of the pixels includes first and second sub-pixels, and each of the first and second sub-pixels has a light emitting region for emitting light. The first sub-pixel includes a first light emitting element in the light emitting region and configured to emit visible light. The second sub-pixel includes a second light emitting element in the light emitting region and configured to emit infrared light and a light receiving element configured to receive the infrared light emitted from the second light emitting element to detect a user's touch. The second light emitting element and the light receiving element in the second sub-pixel are electrically insulated from and optically coupled to each other to form a photo-coupler.

A method of forming an LED emitter includes: providing a III-nitride layer on a substrate (310), the III-nitride layer having a planar top surface; providing discrete lateral growth regions on the top surface; selectively epitaxially growing, on each discrete lateral growth region, a base region (1210) comprising an In(x)Ga(1-x)N material, each extending perpendicular to the top surface; providing surfaces of the In(x)Ga(1-x)N material on portions of the base regions (1210), the surfaces having a relaxed strain and being characterized by a base lattice constant within 0.1% of its bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions including light-emitting layers of In(y)Ga(1-y)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and characterized by an active region (1240) lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.2 and y>0.3.

A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

An optoelectronic device manufacturing method including the steps of: a) forming an active diode stack including first and second of opposite conductivity types; b) forming an integrated control circuit including a plurality of elementary control cells each including at least one MOS transistor; c) after steps a) and b), transferring the integrated control circuit onto the upper surface of the active diode stack; and d) after step c), forming trenches extending vertically through the integrated control circuit and emerging into or onto the first layer and delimiting a plurality of pixels each including a diode and an elementary control cell.

A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.

A method of manufacturing a nitride semiconductor device includes: forming a first semiconductor layer containing Al, Ga, and N and having a first thickness by doping a p-type impurity; forming a second semiconductor layer over the first semiconductor layer without doping an n-type impurity and without doping a p-type impurity, the second semiconductor layer containing Al and N and having a second thickness; and heat treating the first semiconductor layer and the second semiconductor layer. The second thickness is less than the first thickness. T band gap energy of the second semiconductor layer is greater than a band gap energy of the first semiconductor layer. After the heat treating of the first semiconductor layer and the second semiconductor layer, the second semiconductor layer contains the p-type impurity by diffusion of the p-type impurity from the first semiconductor layer.