An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

A light-emitting device includes: a light-emitting device core including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode layer on the second semiconductor layer of the light-emitting device core, and an insulating film around a side surface of the light-emitting device core, wherein a side surface of the electrode layer protrudes outward from a side surface of the second semiconductor layer.

A semiconductor light-emitting element includes: a first protective layer made of SiO.sub.2 and a second protective layer made of SiN.sub.x. The first protective layer covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, the p-side contact electrode, the n-side contact electrode, the p-side current diffusion layer, and the n-side current diffusion layer in portions different from portions of the first p-side pad opening and the first n-side pad opening. The second protective layer covers the first protective layer in a portion different from portions of the second p-side pad opening and the second n-side pad opening, covers an inner circumferential surface of the first protective layer that defines the first p-side pad opening, and covers an inner circumferential surface of the first protective layer that defines the first n-side pad opening.

A vapor phase growth apparatus of embodiments includes: a reactor; a holder provided in the reactor to place a substrate thereon; an annular out-heater provided below the holder; an in-heater provided below the out-heater; a disk-shaped upper reflector provided below the in-heater and formed of pyrolytic graphite; and a disk-shaped lower reflector provided below the upper reflector, formed of silicon carbide, and having a thickness smaller than that of the upper reflector.

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an emission wavelength of 200 nm to 350 nm, and includes an n-type layer 30, a light emitting layer 40, an electron blocking layer 60, and a p-type contact layer 70 in this order. The electron blocking layer 60 has a co-doped region layer 60c, the p-type contact layer 60 is made of p-type Al.sub.xGa.sub.1-xN (0≤x≤0.1), and the p-type contact layer 60 has a thickness of 300 nm or more.

An epitaxial wafer for an ultraviolet light emitting device, including, a heat-resistant first support substrate, a planarization layer with a thickness of 0.5 to 3 μm on at least upper surface of the first support substrate, a group III nitride single crystal seed crystal layer with a thickness of 0.1 to 1.5 μm, bonds to upper surface of the planarization layer by bonding, on the seed crystal layer, an epitaxial layer including at least a first conductivity type cladding layer containing Al.sub.xGa.sub.1-xN (0.5<x≤1) as a main component, an AlGaN-based active layer, and a second conductivity type cladding layer containing Al.sub.yGa.sub.1-yN (0.5<y≤1) as a main component being laminated and grown in order. Thus, an epitaxial wafer for an ultraviolet light emitting device enables high quality light emitting devices in the deep ultraviolet region (UVC: 200 to 250 nm) to be manufactured at a lower cost than before.

A display device including a substrate and a plurality of pixels in a display region of the substrate. Each of the pixels includes first and second sub-pixels, and each of the first and second sub-pixels has a light emitting region for emitting light. The first sub-pixel includes a first light emitting element in the light emitting region and configured to emit visible light. The second sub-pixel includes a second light emitting element in the light emitting region and configured to emit infrared light and a light receiving element configured to receive the infrared light emitted from the second light emitting element to detect a user's touch. The second light emitting element and the light receiving element in the second sub-pixel are electrically insulated from and optically coupled to each other to form a photo-coupler.

The present disclosure provides a full-color LED structure, a full-color LED structure unit, and a method for manufacturing the same. Different wavelengths of light emitted from the first sub-region, the second sub-region and the third sub-region of the light-emitting layer are achieved by controlling different surface dimensions of the bottom wall and the side wall of the first trench or the top wall of the first semiconductor layer. The above process is simple and can form full-color LED structure units during a single epitaxial growth process of the light-emitting layer, such that the size of the full-color LED is reduced, the cost is reduced, the service life is extended, and the reliability is improved.