A Light Emitting Diode (LED) precursor and a method of forming a LED precursor is provided. The LED precursor comprises a first semiconducting layer and a monolithic LED structure provided on a growth surface of the first semiconducting layer. The first semiconducting layer comprises Group III-nitrides. The first semiconducting layer includes a mesa structure extending from a major surface of the first semiconducting layer to define a growth surface including a bulk semiconductor surface and a mesa surface. The first semiconducting layer comprises a first semiconducting sublayer comprising a Group III nitride having a first in-plane lattice constant, and a strain-relaxed sublayer. The strain relaxed sublayer comprises a Group III-nitride provided across the first semiconducting sublayer, wherein the strain relaxed sublayer provides the mesa surface of the mesa structure, such that the mesa surface has a second in-plane lattice constant which is larger than the first in-plane lattice constant. The monolithic LED structure is provided on the growth surface of the first semiconducting layer such that the monolithic LED structure covers the mesa surface and the bulk semiconducting surface, wherein the monolithic LED structure comprises a plurality of Group III-nitride layers. The monolithic LED structure has a first monolithic LED structure portion provided over the mesa surface, and a second monolithic LED structure portion encircling the first monolithic LED structure portion and having an inclined sidewall surface relative to the mesa surface.

A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga.sub.2O.sub.3 or group III-V semiconductor substrate; wherein a plurality of holes are present through said graphene layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

The present invention relates to a display device having a structure in which an assembly substrate on which self-assembly has taken place can be used as a final substrate, and a method for manufacturing same. According to an embodiment of the present invention, first-conductive-type electrodes of vertical-type semiconductor light-emitting elements can be connected to seed metal, which is used as a wiring electrode, via a solder part, and thus there is the effect of directly using, as a final substrate, an assembly substrate on which the vertical-type semiconductor light-emitting elements are self-assembled, without an additional transfer process.

Disclosed herein are techniques relating to wafer-to-wafer bonding for manufacturing light-emitting diodes (LEDs). In some embodiments, a method includes reducing bowing present in a semiconductor material and a substrate on which the semiconductor material is formed. The reducing involves segmenting the semiconductor material through etching the semiconductor material to form gaps between adjacent segments. The semiconductor material includes an n-type layer, a quantum well layer, and a p-type layer. The method further includes bonding a base wafer to the semiconductor material, removing the substrate from the semiconductor material, and forming a plurality of trenches. The trenches extend through the semiconductor material within each of the segments, thereby singulating the LEDs. In some embodiments, the method is performed in the following order: reducing bowing, bonding the base wafer, removing the substrate, forming the trenches.

A light emitting device including a substrate having a light emitting area and a light shielding area, a light emitting structure disposed on the substrate and comprising at least one active layer, and a light shielding layer disposed on the substrate and defining the light shielding area, in which the light emitting area overlaps with the light emitting structure, the substrate has a rough surface overlapping at least a portion of the light emitting area, and a portion of the rough surface is covered with the light shielding layer, and light emitted from the at least one active layer is configured to be transmitted through the substrate.

A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.