A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Al.sub.x1Ga.sub.1-x1-y1In.sub.y1N, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Al.sub.x2Ga.sub.1-x2-y2In.sub.y2N, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Al.sub.x3Ga.sub.1-x3-y3In.sub.y3N, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

A light emitting unit and a manufacturing method thereof are provided. The light emitting unit includes a light emitting diode (LED) chip including a light emitting surface, and an optical functional film disposed on the light emitting surface of the LED chip, where a light transmittance of the optical functional film is greater than 95% in a wavelength range of 350 nm to 480 nm.

Provided is a technique for manufacturing a semiconductor light-emitting element for which it is possible to dramatically increase light emission efficiency to a greater degree than in the past. An AlInN film provided on a GaN epitaxial film that is formed on a substrate, wherein: the AlInN film is formed by lamination of AlInN layers; between the laminated AlInN layers, there is provided a cap layer that comprises GaN, AlN, or AlGaN, and has a thickness of 0.1-10 nm; a super lattice structure is formed; the total thickness exceeds 200 nm; and the root-mean-square height RMS is 3 nm or less. A method for forming an AlInN film, the method being such that: a step for forming an AlInN layer is repeated a plurality of times, said step involving using any of an organometallic vapor phase growth method, a molecular beam epitaxy method, and a sputtering method to form the AlInN layer to a thickness of 200 nm or less by epitaxial growth in an atmosphere of 700-850° C. on a GaN epitaxial film formed on a substrate; and the AlInN layer is grown until a prescribed thickness is reached.

A method for manufacturing a plurality of crystalline semiconductor islands having different lattice parameters includes providing a relaxation substrate comprising a support and a flow layer on the support that includes first and second groups of blocks having different viscosities at a relaxation temperature. The relaxation substrate also comprises a plurality of strained crystalline semiconductor islands on the flow layer, the islands of a first group being located on the first group of blocks and islands of a second group being located on the second group of blocks. The relaxation substrate is then heat treated at a relaxation temperature higher than or equal to the glass transition temperature of at least one block of the flow layer to cause differentiated lateral expansion of the first and second groups of islands such that the first and second groups of relaxed islands then have different lattice parameters.

An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

A light emitting device includes a light emitting element including a first base member, and a stacked body provided to the first base member, and a second base member provided with the light emitting element, the stacked body includes a first columnar section having a first height, and a second columnar section having a second height smaller than the first height, the first columnar section and the second base member are electrically connected to each other via a first conductive member between the stacked body and the second base member, the second columnar section and the second base member are electrically connected to each other via a second conductive member between the stacked body and the second base member, the first conductive member has a third height, and the second conductive member has a fourth height larger than the third height.

A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.