A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.

A structure includes a first material layer, a second material layer, and a dielectric masking layer having a thickness of 20 nm or less and containing pinholes having a width of 200 nm or less filled with the second material of second material layer located between the first material layer and the second material layer. A method of forming a LED includes forming a buffer layer over a support substrate, forming a dielectric masking layer having a thickness of 20 nm or less and containing pinholes having a width of 200 nm or less on the semiconductor buffer layer, forming a n-doped semiconductor material layer on the dielectric masking layer such that the n-doped semiconductor material of the n-doped semiconductor layer fills the pinholes and contacts the buffer layer, forming an active region over the n-doped semiconductor material layer, and forming a p-doped semiconductor material layer over the active region.

A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

A nitride semiconductor element includes: a first light emission part that includes a first n-side semiconductor layer, a first active layer, and a first p-side semiconductor layer; a first layer that contains an n-type impurity of a first concentration, located on the first light emission part, and in contact with the first p-side semiconductor layer; a second layer that contains an n-type impurity of a second concentration, located on the first layer; and a second light emission part that includes a second n-side semiconductor layer located on the second layer, a second active layer, and a second p-side semiconductor layer. The second n-side semiconductor layer contains an n-type impurity of a third concentration. The first and second concentrations are higher than the third concentration. The first concentration is higher than the second concentration. A thickness of the second layer is larger than a thickness of the first layer.

A semiconductor growth substrate includes: an r-plane of a sapphire as a main plane; and a plurality of convex shapes formed on the main plane, in which the convex shapes have a length of 2000 nm or less in a predetermined first direction among in-plane directions of the main plane, and heights of the convex shapes adjacent to each other are different.

The disclosure illustrates a composite substrate and a method for manufacturing the same, the method including: disposing a mask layer on an upper surface of a substrate; forming a plurality of mask patterns spaced apart from each other to form a plurality of intervals thereamong; filling a dummy metallic material into the intervals; removing the mask patterns to form a mesh-like dummy metallic layer; and removing the dummy metallic layer while depositing a nitride layer so as to form a mesh-like structure confined by the nitride layer and the substrate. The disclosure also illustrates a method for manufacturing a light-emitting device using the composite substrate.

A light source assembly includes a plurality of cells and a driving circuit. Each of the cells includes a transistor and a light source. The transistor includes a drain region that serves as a cathode of the light source. The driving circuit is configured to drive the cell. An optical sensor cell and a method for manufacturing thereof are also disclosed.

A spherical vertical micro light-emitting diode (LED) is provided. The spherical vertical micro LED includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode covered on at least part of a surface of the first semiconductor layer, a second electrode covered on at least part of a surface of the second semiconductor layer, and an insulating layer covered on an outside surface of the light-emitting layer, or covered on the outside surface of the light-emitting layer as well as part of the surface of the first semiconductor layer and part of the surface of the second semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the light-emitting layer form a sphere structure. The first electrode, the second electrode, and the insulating layer form a spherical structure.

Provided is a display device including a light emitting unit that can emit a plurality of types of light having different wavelengths to the outside at a desired ratio with high intensity without increasing manufacturing costs in proportion to a number of pixels even when the number of pixels increases. Provided is a display device including a light emitting unit in which a plurality of types of PiN junction-type light emitting diodes that emit light having different wavelengths are arranged on the same substrate, and at least one type among the plurality of types of light emitting diodes has an active layer containing a rare earth element. Provided is a display device in which a plurality of types of light emitting diodes are sequentially stacked on the surface of a substrate, and a light emitting layer for one color is formed to overlap at least a portion of a light emitting layer for another color.

A vehicular lighting system includes at least one light emitting diode chip mini-pixel that has (i) a multi-quantum well stack electrified by a p-type material, an n-type material, and a plurality of electrodes, (ii) a nano-pattern light extractor and (iii) a lateral light confinement distributed Bragg reflector mirror. The at least one light emitting diode chip mini-pixel emits light to illuminate an area exterior or interior of a vehicle equipped with the vehicular lighting system.