A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.

A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

A semiconductor light emitting device includes: an n-type clad layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material containing silicon (Si); an intermediate layer provided on the n-type clad layer and containing Si; an active layer of an AlGaN-based semiconductor material provided on the intermediate layer; and a p-type semiconductor layer provided on the active layer. A distribution of an Si concentration in a direction in which the n-type clad layer, the intermediate layer, and the active layer are stacked has a local peak at least at a position of the intermediate layer.

The present disclosure provides an inorganic light-emitting diode chip, a method for preparing the same, and a display substrate. The inorganic light-emitting diode chip includes: an undoped gallium nitride layer and a light-emitting unit arranged on the undoped gallium nitride layer, the light-emitting unit includes a first light-emitting subunit including a first N-type gallium nitride layer, a first multi-quantum well layer and a first P-type gallium nitride layer that are sequentially arranged, and a second light-emitting subunit including a second P-type gallium nitride layer, a second multi-quantum well layer and a second N-type gallium nitride layer that are sequentially arranged on a surface of the first P-type gallium nitride layer; an orthogonal projection of the second multi-quantum well layer on the undoped gallium nitride layer is smaller than an orthogonal projection of the first multi-quantum well layer on the undoped gallium nitride layer.

An apparatus including a red LED and monolithic multicolor LED pixel and a method of fabricating an LED device is disclosed. The method includes providing a substrate for the wafer. The method also includes forming a light emitting diode (LED) using Hydrazine to dispose above the substrate an Indium Gallium Nitride (InGaN) layer of the LED.