A light-emitting device includes a patterned substrate, a buffer layer, an epitaxial layered unit, and at least one hole structure. The patterned substrate includes a supporting substrate having an upper surface, and a plurality of protrusions formed on the upper surface. Each of the protrusions includes a base and a cone sequentially stacked in such order on the upper surface. The cone is made of a material different from that of the supporting substrate. The buffer layer formed on a side wall surface of each of the protrusions and the upper surface of the supporting substrate exposed from the protrusions. The epitaxial layered unit is formed on the buffer layer opposite to the patterned substrate. The hole structure is disposed above a top end of at least one of the protrusions. A method for manufacturing the light-emitting device is also disclosed.

Provided are a method of manufacturing a micro-LED and a method of manufacturing a display apparatus to which the method is applied. In the method of manufacturing a micro-LED, a membrane formed to include a cavity is formed on a substrate, and then, a sacrificial layer that may be selectively removed by wet etching is formed on the membrane. Next, a light-emitting device is formed on the sacrificial layer, and the light-emitting device is separated from the membrane by the wet etching. In an example, an undoped semiconductor layer may further be formed between the membrane and the sacrificial layer. The sacrificial layer may include an oxide layer having the same crystal lattice structure as that of the undoped semiconductor layer. In an example, another undoped semiconductor layer may further be formed between the sacrificial layer and the light-emitting device.

Provided is an LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions have opposite orders of deposition of the n- and p-layers. One light-emitting active region is embedded between the n- and p-layers of the first junction and another light-emitting active region is embedded between the n- and p-layers of the second junction. Contacts are processed such that forward current can be passed in parallel through both of the junctions using a single voltage source. For a given forward current, the LED operates at lower voltage with higher optical flux and efficiency.

Provided is a monolithically integrated red green blue (RGB) light emitting diode (LED) array manufactured with a reduced number of mesa etching steps and contact terminals. The LED array may have two or three p-n-junctions grown sequentially on a wafer. One of the p-n junctions has the opposite order of deposition of the n- and p-layers. A light-emitting active region is embedded between the n- and p-layers of each of the p-n junctions. Each active region emits light of different wavelength. The wafer is etched into multi-level mesas, creating two separate voltage terminals and a ground contact to control the bias between particular semiconductor layers. All of the p-n junctions share a common ground contact.

A method of manufacturing a semiconductor light-emitting element includes: forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of the n-type semiconductor layer; treating the upper surface of the n-type semiconductor layer with a plasma in an atmosphere including an N.sub.2 gas and an NH.sub.3 gas; and forming a n-side contact electrode on the upper surface of the n-type semiconductor layer treated with the plasma.

A method for manufacturing an image display device includes: preparing a substrate, the substrate including a circuit and a first insulating film covering the circuit; forming a graphene-including layer on the first insulating film; forming a semiconductor layer on the graphene-including layer; forming a light-emitting element by etching the semiconductor layer, the light-emitting element including a bottom surface on the graphene-including layer, and a light-emitting surface at a side opposite to the bottom surface; forming a second insulating film covering the graphene-including layer, the light-emitting element, and the first insulating film; forming a first via extending through the first and second insulating films; and forming a wiring layer on the second insulating film. The first via is located between the wiring layer and the circuit and electrically connects the wiring layer and the circuit. The light-emitting element is electrically connected to the circuit via the wiring layer.

A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga.sub.2O.sub.3.

The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.

A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a first bonding layer interposed between the first and second LED sub-units, a second bonding layer interposed between second and third LED sub-units, and a first connection electrode electrically connected to and overlapping at least one of the first, second, and third LED sub-units, the first connection electrode having first and second opposing side surfaces, the first side surface having a first length and the second side surface having a second length, in which the difference in length between the first side surface and the second side surface of the first connection electrode is greater than a thickness of at least one of the LED sub-units.