LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Light emitting diodes re described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.

The present invention relates to an infrared light emitting diode and a manufacturing method thereof, and more specifically, to a 1,000 nm infrared light emitting diode with improved light emitting efficiency through compensation of strain, and a manufacturing method thereof.

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

A micro LED display panel includes a blue LED layer, a green LED layer, and a red LED layer. The blue LED layer, the green LED layer, and the red LED layer are in a stacked formation. The blue, the green, and the red LED layers each include a plurality of micro LEDs spaced apart from each other. The composition of the layers is such that light emitted from all but the bottom layer is able to pass through transparent material in other layers before exiting the panel and being viewed.

A stacked III-V semiconductor diode having an n.sup.+-layer with a dopant concentration of at least 10.sup.19 N/cm.sup.3, an n.sup.-layer with a dopant concentration of 10.sup.12 -10.sup.16 N/cm.sup.3, a layer thickness of 10-300 microns, a p.sup.+-layer with a dopant concentration of 510.sup.18-510.sup.20 cm.sup.3, with a layer thickness greater than 2 microns, wherein said layers follow one another in the sequence mentioned, each comprising a GaAs compound. The n.sup.+-layer or the p.sup.+-layer is formed as the substrate and a lower side of the n.sup.-layer is materially bonded with an upper side of the n.sup.+-layer, and a doped intermediate layer is arranged between the n-layer and the p+-layer and materially bonded with an upper side and a lower side.

An AlGaInP light-emitting diode includes from bottom up a substrate, a distributed Bragg reflector (DBR) reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.