A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.

A multilayer structure comprising regions of higher aluminum (Al) composition as compared to adjacent layers, in combination with an undulating active region and controlled buffer layer crystal quality, promotes radiative recombination and improves the performance and efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light emitting devices.

A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The one or more quantum well layers include at least one quantum well layer that is doped with both n-type dopants and p-type dopants. A net carrier concentration of the at least one quantum well layer is between about 1×10.sup.17 /cm.sup.3 and about 10×10.sup.17 /cm.sup.3. The n-type dopants include, for example, Si, Ge, S, Se, or Te. The p-type dopants include, for example, C, Mg, Be, or Zn. The active region is characterized by a lateral linear dimension equal to or less than about 10 .Math.m.

A semiconductor light-emitting device includes first and second semiconductor layers and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a compound semiconductor represented by a compositional formula Al.sub.XGa.sub.1-XAs (0<X<1). The first semiconductor layer has an n-type conductivity and includes a first impurity of the n-type. The first layer further includes carbon with a lower concentration than a concentration of the first impurity, and oxygen with a lower concentration than the concentration of the first impurity. The second semiconductor layer includes a compound semiconductor represented by a compositional formula AlYGa1-YAs (0<Y<1). The second semiconductor layer has a p-type conductivity and including a second impurity of the p-type. The second semiconductor layer further includes carbon with a concentration substantially equal to the carbon concentration in the first semiconductor layer.

A light-emitting device includes a light-emitting laminating structure having an ohmic contact layer, a transition layer, a current-spreading layer, a first type semiconductor layer, an active layer, and a second type semiconductor layer. The current-spreading layer has aluminum, and, in the current-spreading layer, a relative content of the aluminum with respect to a composition of the current-spreading layer is fixed. The transition layer has aluminum, and, in the transition layer, a relative content of the aluminum with respect to a composition of the transition layer is less than the relative content of the aluminum in the current-spreading layer. A method for producing the light-emitting device is also disclosed.

A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

A light emitting element and a display device including the same are provided. The light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer, and an insulating layer surrounding an outer surface of the protective layer. A surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer includes a first lattice point, wherein the protective layer includes a first atom and a second atom, and wherein the first atom of the protective layer is at the first lattice point.

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.

Described herein are optoelectronic devices and methods incorporating strain balanced direct bandgap Al.sub.xIn.sub.1-xP multiple quantum wells. The described devices are strain balanced in that the net strain between the ordered quantum wells and barriers is low, or in some cases zero. Advantageously, the described devices may be specifically designed for higher efficiency than existing Al.sub.xIn.sub.1-xP and may be grown on commercially available GaAs substrates.