Shown is a method of manufacturing a light emitting device capable of efficiently heating a device at the time of DPP annealing and suppressing heat generation of the device at the time of driving. In the method of manufacturing the light emitting device, a first p-type electrode is formed on a low-concentration portion having a low p-type dopant concentration formed under a first region of the p-type semiconductor portion, a second p-type electrode is formed on a high-concentration portion having a high p-type dopant concentration formed under a second region of the p-type semiconductor portion, and a predetermined forward bias voltage is applied between the first p-type electrode and a first n-type electrode formed on an n-type semiconductor portion at the time of DPP annealing.

A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

Shown is a method of manufacturing a light emitting device capable of efficiently heating a device at the time of DPP annealing and suppressing heat generation of the device at the time of driving. In the method of manufacturing the light emitting device, a first p-type electrode is formed on a low-concentration portion having a low p-type dopant concentration formed under a first region of the p-type semiconductor portion, a second p-type electrode is formed on a high-concentration portion having a high p-type dopant concentration formed under a second region of the p-type semiconductor portion, and a predetermined forward bias voltage is applied between the first p-type electrode and a first n-type electrode formed on an n-type semiconductor portion at the time of DPP annealing.

A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V1) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.

A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

A method of manufacturing a semiconductor element includes: providing a semiconductor stack including: a silicon substrate containing a first impurity of a first conductivity type that is one of p-type and n-type, at a first concentration, and a silicon semiconductor layer provided on the silicon substrate, the silicon semiconductor layer including: a first silicon semiconductor layer containing a second impurity of the first conductivity type at a second concentration that is lower than the first concentration, and a second silicon semiconductor layer containing a third impurity of a second conductivity type that is the other of p-type and n-type; and irradiating the silicon semiconductor layer with light having a predetermined peak wavelength in a presence of a forward current flowing through the silicon semiconductor layer such that the third impurity is diffused. The predetermined peak wavelength is longer than a wavelength corresponding to a magnitude of a bandgap of silicon.

A germanium semiconductor layer doped with a dopant such as boron becomes a p-type semiconductor. The semiconductor layer is preheated at a preheating temperature ranging from 200 C. to 300 C., and then heated at a treatment temperature ranging from 500 C. to 900 C., by extremely short-time irradiation of flash light. While oxygen is unavoidably mixed in germanium and becomes a thermal donor at 300 C. to 500 C., the semiconductor layer stays in a temperature range of 300 C. to 500 C. for a negligibly short period of time due to an extremely short irradiation time of 0.1 milliseconds to 100 milliseconds by the flash light. Therefore, the thermal donor can be prevented from being generated in the germanium semiconductor layer.