Before a semiconductor die of a brittle III-V compound semiconductor is encapsulated with a molding compound during package fabrication, side surfaces of the semiconductor die are treated to avoid or prevent surface imperfections from propagating and fracturing the crystal structure of the substrate of the III-V compound semiconductor under the stresses applied as the molding compound solidifies. Surfaces are treated to form a passivation layer, which may be a passivated layer of the substrate or a passivation material on the substrate. In a passivated layer, imperfections of an external layer are transformed to be less susceptible to fracture. Passivation material, such as a poly-crystalline layer on the substrate surface, diffuses stresses that are applied by the molding compound. Semiconductor dies in flip-chip and wire-bond chip packages with treated side surfaces as disclosed have a reduced incidence of failure caused by die fracturing.

The invention provides an adhesive composition containing an adhesive component (S) and a release component (H) formed of a polyorganosiloxane having a complex viscosity of 3,400 (Pa.Math.S) or higher.

A method for separating a temporarily bonded substrate stack by bombardment of a joining layer of the substrate stack by means of laser beams emitted by a laser, characterised in that laser beams of the laser reflected and/or transmitted at the temporarily bonded substrate stack are detected during the bombardment of the joining layer with the laser beams. The invention also relates to a corresponding device.

A transfer printing method is described that can be used for a wide variety of materials, such as to allow for circuits formed of different materials to be integrated together on a single integrated circuit. A tether (18) is formed on dice regions (16) of a first wafer (30), followed by attachment of a second wafer (32) to the tethers. The dice regions (16) are processed so as to be separated, followed by transfer printing of the dice regions to a third wafer (34).

Disclosed is a method for separating a plate into multiple individual detached components or cutting the plate into chips. The back end process for a plate includes providing a substrate; attaching the plate to the substrate using a sacrificial layer that is made of materials that in a solid state at ambient temperature and ambient pressure, and having a transformation temperature into one or more gaseous compounds at ambient pressure of between 80° C. and 600° C.; and separating the plate attached on the substrate into a plurality of plate portions; increasing temperature and/or reducing surrounding pressure to transform the sacrificial layer into one or more gaseous compounds.

A method of manufacturing a semiconductor chip includes preparing a semiconductor substrate having an active surface on which a device layer is provided and an inactive surface opposite to the active surface, the device layer having a integrated circuit (IC) areas and a cut area provided between adjacent IC areas; forming anti-collision recesses in regions of the cut area that are adjacent to corners of the IC areas, each of the anti-collision recesses having rounded internal sidewalls, each of the rounded internal sidewalls corresponding to a respective corner of the adjacent corners; forming a modified portion in the semiconductor substrate by irradiating a cut line of the cut area with a laser; polishing the inactive surface of the semiconductor substrate, wherein cracks propagate from the modified portion in a vertical direction of the semiconductor substrate; and separating the IC areas from each other along the cracks to form semiconductor chips.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages. Corresponding structures result from these methods.

A sheet affixing apparatus includes a drawing unit for drawing a sheet from a sheet roll and a sheet cutter for cutting the sheet drawn from the sheet roll by the drawing unit. The sheet cutter includes a sheet support for supporting from below the sheet drawn from the sheet roll by the drawing unit, a cutting knife for cutting the sheet supported by the sheet support, along the sheet support, and a sheet presser for pressing the sheet against the sheet support forwardly of the cutting knife in a direction along which the cutting knife moves in cutting the sheet, when the sheet is cut.

Provided is a manufacturing method of a semiconductor device comprising a semiconductor substrate which includes a first surface and a second surface which is on an opposite side of the first surface, the method comprising: a front surface processing for providing a first resist to the first surface of the semiconductor substrate and processing the first surface; a first protective film forming for forming a first protective film above the first surface of the semiconductor substrate; a second protective film forming for forming a second protective film above the first protective film, wherein a material of the second protective film is different from that of the first protective film; a back surface processing for processing the second surface of the semiconductor substrate; and a protective film removing for selectively removing the second protective film.