A method for transferring a plurality of die operatively associated with a transfer apparatus to a glass substrate to form a circuit component. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.

A micro device mass transfer equipment including a base stage, a moving stage, a substrate stage, a laser device, a rolling and pressing mechanism, and a heating mechanism is provided. The moving stage is movably disposed on the base stage, and moves with a moving path. The substrate stage is movably disposed on the base stage, and is adapted to move between different positions overlapping the moving stage. The laser device is movably disposed on the base stage. The laser device is adapted to move relative to the substrate stage, and emits a laser beam toward the substrate stage. The rolling and pressing mechanism is disposed on the moving path of the moving stage, and forms a contact region with the moving stage. The heating mechanism is disposed corresponding to the contact region, and is adapted to heat the contact region between the moving stage and the rolling and pressing mechanism.

A package structure is provided. The package structure includes a first semiconductor package and a second semiconductor package connected to the first semiconductor package. The first semiconductor package includes an integrated circuit. The integrated circuit includes a first semiconductor die and a plurality of second semiconductor dies, the plurality of second semiconductor dies are stacked on the first semiconductor die, wherein at least one of orthogonal projections of the plurality of second semiconductor dies is partially overlapped an orthogonal projection of the first semiconductor die. The integrated circuit further includes through vias formed aside the first semiconductor and arranged in a non-overlapped region of the at least one of the orthogonal projections of the plurality of second semiconductor dies with the orthogonal projection of the first semiconductor die. A manufacturing method of a package structure is also provided.

An apparatus for transferring an electronic component is configured to transfer an electronic component on a flexible carrier to a target substrate. The apparatus includes a first frame, a second frame, an abutment module, an actuator, and a negative pressure generating device. The abutment module includes an abutting component and a guide. The guide guides a movement of the abutting component. The actuator actuates the abutment module so that the abutting component and the guide are respectively moved between a start position and an end position of an abutment path. The negative pressure generating device is pumped through the abutment module. When the abutment module abuts against the flexible carrier, a negative pressure is generated between the abutment module and the flexible carrier by the negative pressure generating device. The abutting component and the guide are moved simultaneously in at least a portion of the abutment path.

Discussed is an assembly board including a base portion; a plurality of assembly electrodes extending in one direction and disposed on the base portion at predetermined intervals; a dielectric layer stacked on the base portion to cover the plurality of assembly electrodes; barrier ribs stacked on the dielectric layer and defining cells in which semiconductor light emitting diodes are seated at the predetermined intervals along an extending direction of the plurality of assembly electrodes so as to overlap a portion of the plurality of assembly electrodes; and a voltage applying unit connected to at least opposite ends of the plurality of assembly electrodes to apply one or more voltage signals to the plurality of assembly electrodes, wherein a voltage signal of the same polarity is applied to the plurality of assembly electrodes from the voltage applying unit connected to the opposite ends.

Discussed is an assembly board including: a base portion; a plurality of assembly electrodes extending in one direction and disposed on the base portion at predetermined intervals; a dielectric layer stacked on the base portion to cover the plurality of assembly electrodes; and barrier ribs stacked on the dielectric layer and defining cells in which semiconductor light emitting diodes are seated at the predetermined intervals along an extending direction of the plurality of assembly electrodes so as to overlap a portion of the plurality of assembly electrodes, wherein the plurality of assembly electrodes include first electrodes and second electrodes disposed on different planes on the base portion, and wherein the first electrodes are disposed on one surface of the base portion, and the second electrodes are disposed on one surface of the dielectric layer.

The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

A manufacturing method fora micro light-emitting diode (LED) display panel includes: providing a base substrate carrying a plurality of LED dies, each LED die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer, the first semiconductor layer being bonded with the base substrate through a sacrificial layer, a material of the sacrificial layer being decomposable under laser irradiation; providing a backplane having a plurality of bonding structures; bonding at least some LED dies of the plurality of LED dies to at least some of the plurality of bonding structures through respective first conductive layers; and peeling each of the at least some LED dies from the base substrate through laser lift-off.

A displaying apparatus includes a pixel unit. The pixel unit includes at least one pixel having a light emitting device and a light conversion layer for converting a first wavelength of light of the light emitting device into a second wavelength of light different from the first wavelength; and an insulation layer covers side surfaces of the light emitting device and the light conversion layer.