A semiconductor device includes a semiconductor die. The semiconductor die includes a device layer, an interconnect layer over the device layer, a conductive pad over the interconnect layer, a conductive seed layer directly on the conductive pad, and a passivation layer encapsulating the conductive pad and the conductive seed layer. The conductive pad is between the interconnect layer and the conductive seed layer.

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface; a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity; a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface; a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity; a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%. The first semiconductor structure includes a plurality of first composite conductive features, wherein at least one of the plurality of first composite conductive features includes a first protection liner, a first graphene liner in the first protection liner and a first core conductor in the first graphene liner.

An electronic apparatus includes: a first substrate; an electrode over the first substrate; a first conductor having a porous structure above the first substrate, the first conductor covering an upper surface and a side surface of the electrode; and an insulator above the first substrate, the insulator covering an upper surface and a side surface of the first conductor, wherein the insulator has an opening that exposes the first conductor.

An electronic apparatus includes: a first substrate; an electrode over the first substrate; a first conductor having a porous structure above the first substrate, the first conductor covering an upper surface and a side surface of the electrode; and an insulator above the first substrate, the insulator covering an upper surface and a side surface of the first conductor, wherein the insulator has an opening that exposes the first conductor.

Methods of forming semiconductor structures comprising one or more cavities (106), which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate (100), providing a sacrificial material (110) within the one or more cavities, bonding a second substrate (120) over the a surface of the first substrate, forming one or more apertures (140) through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.

The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15) of the cavity is provided to expose the cavity to the environment.

The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15) of the cavity is provided to expose the cavity to the environment.

A connection structure for a substrate is provided. The substrate has a plurality of connection pads and an insulation protection layer with the connection pads being exposed therefrom. The connection structure includes a metallic layer formed on an exposed surface of each of the connection pads and extending to the insulation protection layer, and a plurality of conductive bumps disposed on the metallic layer and spaced apart from one another at a distance less than or equal to 80 m, each of conductive bumps having a width less than a width of each of the connection pads. Since the metallic layer covers the exposed surfaces of the connection pads completely, a colloid material will not flow to a surface of the connection pads during a subsequent underfilling process of a flip-chip process. Therefore, the colloid material will not be peeled off from the connection pads.