A method for manufacturing a metal bump device includes providing a substrate structure including a substrate and a metal layer having a recess on the substrate, forming a metal bump on the recess of the metal layer using a ball placement process, and forming a solder paste on the metal bump using a printing process. The manufacturing time is shorter, the manufacturing efficiency is higher, and the manufacturing cost is lower than conventional manufacturing methods.

A method for making and a semiconductor device comprises a silicon die including a metal contact region and, at least one passivation layer covering the semiconductor die and patterned such as to form an opening to the metal contact region of the semiconductor die. A continuous part of a contact layer comprises a refractory metal, and overlaps and completely covers the opening in the at least one passivation layer to contact the metal contact region in the opening and adhere to the at least one passivation layer along the entire edge of the continuous part. The contact layer comprises at least an adhesion layer and at least a diffusion barrier layer. A noble metal layer is arranged over the contact layer and completely covers the continuous part to adhere to the at least one passivation layer around the edge of the continuous part.

A method of manufacture of an integrated circuit system includes: providing a semiconductor wafer with a bond pad; attaching a detachable carrier to the semiconductor wafer, the detachable carrier including a carrier frame portion and a terminal structure; removing the carrier frame portion with the terminal structure attached to the semiconductor wafer; and forming an encapsulation encapsulating the semiconductor wafer, the bond pad, and the terminal structure.

A method of manufacture of an integrated circuit system includes: providing a semiconductor wafer with a bond pad; attaching a detachable carrier to the semiconductor wafer, the detachable carrier including a carrier frame portion and a terminal structure; removing the carrier frame portion with the terminal structure attached to the semiconductor wafer; and forming an encapsulation encapsulating the semiconductor wafer, the bond pad, and the terminal structure.

A semiconductor package structure includes a first die, a second die disposed on the first die, and a bonding pad structure. The first die includes a semiconductor substrate, an interconnect structure disposed on the first semiconductor substrate, a passivation layer disposed on the interconnect structure, and a test pad disposed on the passivation layer. The test pad includes a contact region that extends through the passivation layer and electrically contacts the interconnect structure, and a bonding recess that overlaps with the contact region in a vertical direction perpendicular to a plane of the first semiconductor substrate. The bonding pad structure electrically connects the first die and the second die and directly contacts at least a portion of the bonding recess.

A method for manufacturing a metal bump device includes providing a substrate structure including a substrate and a metal layer having a recess on the substrate, forming a metal bump on the recess of the metal layer using a ball placement process, and forming a solder paste on the metal bump using a printing process. The manufacturing time is shorter, the manufacturing efficiency is higher, and the manufacturing cost is lower than conventional manufacturing methods.

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

A method for making and a semiconductor device comprises a silicon die including a metal contact region and, at least one passivation layer covering the semiconductor die and patterned such as to form an opening to the metal contact region of the semiconductor die. A continuous part of a contact layer comprises a refractory metal, and overlaps and completely covers the opening in the at least one passivation layer to contact the metal contact region in the opening and adhere to the at least one passivation layer along the entire edge of the continuous part. The contact layer comprises at least an adhesion layer and at least a diffusion barrier layer. A noble metal layer is arranged over the contact layer and completely covers the continuous part to adhere to the at least one passivation layer around the edge of the continuous part.

A semiconductor package structure includes a first die, a second die disposed on the first die, and a bonding pad structure. The first die includes a semiconductor substrate, an interconnect structure disposed on the first semiconductor substrate, a passivation layer disposed on the interconnect structure, and a test pad disposed on the passivation layer. The test pad includes a contact region that extends through the passivation layer and electrically contacts the interconnect structure, and a bonding recess that overlaps with the contact region in a vertical direction perpendicular to a plane of the first semiconductor substrate. The bonding pad structure electrically connects the first die and the second die and directly contacts at least a portion of the bonding recess.

Properties of a semiconductor device are improved. A semiconductor device is configured so as to have a protective film provided over an interconnection and having an opening, and a plating film provided in the opening. A slit is provided in a side face of the opening, and the plating film is also disposed in the slit. Thus, the slit is provided in the side face of the opening, and the plating film is also grown in the slit. This results in a long penetration path of a plating solution during subsequent formation of the plating film. Hence, a corroded portion is less likely to be formed in the interconnection (pad region). Even if the corroded portion is formed, a portion of the slit is corroded prior to the interconnection (pad region) at a sacrifice, making it possible to suppress expansion of the corroded portion into the interconnection (pad region).