A semiconductor component includes a support having a lead integrally formed thereto. An insulated metal substrate is mounted to a surface of the support and a semiconductor chip is mounted to the insulated metal substrate. A III-N based semiconductor chip is mounted to the insulated metal substrate, where the III-N based semiconductor chip has a gate bond pad, a drain bond pad, and a source bond pad. A silicon based semiconductor chip is mounted to the III-N based semiconductor chip. In accordance with an embodiment the silicon based semiconductor chip includes a device having a gate bond pad, a drain bond pad, and a source bond pad. The drain bond pad of the III-N based semiconductor chip may be bonded to the substrate or to a lead. In accordance with another embodiment, the silicon based semiconductor chip is a diode.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

A semiconductor includes a lower structure, an upper structure on the lower structure, and a connection pattern between the lower structure and the upper structure. The connection pattern is configured to electrically connect the lower structure and the upper structure to each other. The lower structure includes a lower base and a first lower chip on the lower base. The first lower chip includes a chip bonding pad, a pad structure, and a heat sink structure. The connection pattern is connected to the upper structure and extends away from the upper structure to be connected to the pad structure. The pad structure has a thickness greater than a thickness of the chip bonding pad. At least a portion of the heat sink structure is at a same height level as at least a portion of the pad structure.

A chip package including a first substrate is provided. The first substrate includes a sensing device. A second substrate is attached onto the first substrate and includes an integrated circuit device. A first conductive structure is electrically connected to the sensing device and the integrated circuit device through a redistribution layer disposed on the first substrate. An insulating layer covers the first substrate, the second substrate and the redistribution layer. The insulating layer has a hole therein and a second conductive structure is disposed under the bottom of the hole. A method for forming the chip package is also provided.

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

A semiconductor package includes: (1) a package substrate including an upper surface; (2) a semiconductor device disposed adjacent to the upper surface of the package substrate, the semiconductor device including an inactive surface; and (3) an antenna substrate disposed on the inactive surface of the semiconductor device.