Provided in a semiconductor package substrate including a semiconductor chip including a connection pad, an encapsulant encapsulating at least a portion of the semiconductor chip, a connection member disposed on the semiconductor chip and the encapsulant, the connection member including a redistribution layer that is electrically connected to the connection pad, a first passivation layer disposed on the connection member, and an adhesive layer disposed on at least one of a top surface of the encapsulant and a bottom surface of the first passivation layer in a region outside of the semiconductor chip.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

A packaged semiconductor structure includes an interconnect layer and a first microelectronic device on a first major surface of the interconnect layer. The structure also includes a substrate having a cavity, wherein the cavity is defined by a vertical portion and a horizontal portion, wherein the vertical portion surrounds the first device, the horizontal portion is over the first device, and the first device is between the horizontal portion and the first major surface of the interconnect layer such that the first device is in the cavity. The structure further includes a second microelectronic device attached to the horizontal portion of the substrate, and encapsulant on the interconnect layer and surrounding the first device, the substrate, and the second device, such that the substrate is embedded in the encapsulant.

A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.

A semiconductor structure includes a packaged semiconductor device having at least one device, a conductive pillar, an encapsulant over the at least one device and surrounding the conductive pillar, wherein the conductive pillar extends from a first major surface to a second major surface of the encapsulant, and is exposed at the second major surface and the at least one device is exposed at the first major surface. The packaged device also includes a conductive shield layer on the second major surface of the encapsulant and on minor surfaces of the encapsulant and an isolation region at the second major surface of the encapsulant between the encapsulant and the conductive pillar such that the conductive shield layer is electrically isolated from the conductive pillar. The semiconductor structure also includes a radio-frequency connection structure over and in electrical contact with the conductive pillar at the second major surface of the encapsulant.

A test set-up for testing a system-in package with an integrated antenna is described herein. According to one exemplary embodiment, the test set-up includes a carrier with an RF probe arranged thereon and a test socket with resilient electric contacts. The test socket is mounted on the carrier and provides an electric contact to interconnects of the package when it is placed on the test socket. The test socket has an opening which is arranged superjacent to the RF probe.

Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.

A method of forming an implantable electrode array that includes one or more packaged control modules. A control module is packaged by mounting the module to a substrate and forming a containment ring around the module. A conformal coating is disposed over the surface of the module to cover the carrier. Within the containment ring, the conformal coating hardens to form a non-porous shell around the control module. The one or more packaged control modules are placed in a flexible array. Electrodes that are mounted to or embedded in the flexible carrier are connected to the one or more control modules.

Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.