Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment an electronic package comprises a package substrate, and a first level interconnect (FLI) bump region on the package substrate. In an embodiment, the FLI bump region comprises a plurality of pads, and a plurality of bumps, where each bump is over a different one of the plurality of pads. In an embodiment, the electronic package further comprises a guard feature adjacent to the FLI bump region. In an embodiment, the guard feature comprises, a guard pad, and a guard bump over the guard pad, wherein the guard feature is electrically isolated from circuitry of the electronic package.

Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment an electronic package comprises a package substrate, and a first level interconnect (FLI) bump region on the package substrate. In an embodiment, the FLI bump region comprises a plurality of pads, and a plurality of bumps, where each bump is over a different one of the plurality of pads. In an embodiment, the electronic package further comprises a guard feature adjacent to the FLI bump region. In an embodiment, the guard feature comprises, a guard pad, and a guard bump over the guard pad, wherein the guard feature is electrically isolated from circuitry of the electronic package.

A 3D fan-out packaging structure of an interconnection system with ultra-high density and a method for manufacturing the same are disclosed; the packaging structure includes a first insulating layer, first metal solder pads, a metal pillar, a first chip, a second insulating layer, second metal solder pads, a first encapsulating layer, a first rewiring layer, a second chip, a second encapsulating layer, a second rewiring layer, and a solder ball. The packaging structure adopts the “RDL first” process, and non-soldering interfaces between the first and second metal solder pads help achieve bonding with a spacing of 5-10 μm or even less, much smaller than conventional soldering spacings, thus increasing the number of available I/O ports and obtaining a high-density, highly integrated packaging structure. In addition, in the present disclosure, various chips and electronic components can be integrated together, thereby achieving high-performance system-level packaging with higher flexibility and compatibility.

A release layer is formed on a surface of an integrated circuit wafer. The surface is passivated and includes metal contact materials. A stress-engineered film having an intrinsic stress profile is deposited over the release layer. The stress-engineered film is patterned and the release layer is undercut etched so that a released portion of the patterned stress-engineered film is released from the surface while leaving an anchor portion fixed to the surface. The intrinsic stress profile in the stress-engineered film biases the released portion away from the surface. The released portion is placed entirely within an area defined by the metal contact material.

Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

A release layer is formed on a surface of an integrated circuit wafer. The surface is passivated and includes metal contact materials. A stress-engineered film having an intrinsic stress profile is deposited over the release layer. The stress-engineered film is patterned and the release layer is undercut etched so that a released portion of the patterned stress-engineered film is released from the surface while leaving an anchor portion fixed to the surface. The intrinsic stress profile in the stress-engineered film biases the released portion away from the surface. The released portion is placed entirely within an area defined by the metal contact material.

In a described example, a device includes an overcoat layer covering an interconnect; an opening in the overcoat layer exposing a portion of a surface of the interconnect; a stud on the exposed portion of the surface of the interconnect in the opening; a surface of the stud approximately coplanar with a surface of the overcoat layer; and a conductive pillar covering the stud and covering a portion of the overcoat layer surrounding the stud, the conductive pillar having a planar and un-dished surface facing away from the stud and the overcoat layer.

A semiconductor device includes a conductive pattern disposed over a semiconductor substrate, and an interconnect structure disposed over the conductive pattern. The semiconductor device also includes an interconnect liner formed between the interconnect structure and the conductive pattern and surrounding the interconnect structure. The inner sidewall surfaces of the interconnect liner are in direct contact with the interconnect structure, and a maximum distance between outer sidewall surfaces of the interconnect liner is greater than a width of the conductive pattern. The semiconductor device further includes a semiconductor die bonded to the semiconductor substrate. The semiconductor die includes a conductive pad facing the interconnect structure, wherein the conductive pad is electrically connected to the conductive pattern.

An apparatus relating generally to a substrate is disclosed. In this apparatus, a post extends from the substrate. The post includes a conductor member. An upper portion of the post extends above an upper surface of the substrate. An exterior surface of the post associated with the upper portion is in contact with a dielectric layer. The dielectric layer is disposed on the upper surface of the substrate and adjacent to the post to provide a dielectric collar for the post. An exterior surface of the dielectric collar is in contact with a conductor layer. The conductor layer is disposed adjacent to the dielectric collar to provide a metal collar for the post, where a top surface of each of the conductor member, the dielectric collar and the metal collar have formed thereon a bond structure for interconnection of the metal collar and the conductor member.