In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

A semiconductor device according to an embodiment includes a substrate. An insulating film is provided above the substrate. Electrode pads are provided on the insulating film. Metallic bumps are respectively provided on surfaces of the electrode pads. A sidewall film comprises a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps. A barrier metal layer comprises first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.

A semiconductor device according to an embodiment includes a substrate. An insulating film is provided above the substrate. Electrode pads are provided on the insulating film. Metallic bumps are respectively provided on surfaces of the electrode pads. A sidewall film comprises a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps. A barrier metal layer comprises first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

A package structure and method for forming the same are provided. The package structure includes a first interconnect structure formed over a first substrate, and the first interconnect structure includes a first metal layer. The package structure further includes a second interconnect structure formed over a second substrate. The package structure includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC), a portion of the first IMC protrudes from the sidewall surfaces of the second IMC, and there could be a grain boundary between the first IMC and the second IMC.

A non alpha controlled plating bath including Tin species and a trace amount of Polonium species is utilized in a plating tool. The plating tool includes a Polonium filter element to remove Polonium species from the plating bath to selectively plate Tin upon a plating cathode. The filter may include a Titanium inner portion surrounding by a stannic oxide exterior. The filter may reduce the Polonium species by having the polonium absorb and then enter within the stannic oxide matrix. The filter may be located within the plating tool reservoir or filter housing. The filter may be fabricated by forming Tin upon a Titanium backbone and converting the Tin to stannic oxide.

Embodiments relate to forming nanoporous contacts on a receiving substrate without using a seed layer on the receiving substrate. The nanoporous contacts can be used to create bonds between electronic components and the receiving substrate. To form the contacts, a photoresist mask is created on the receiving substrate by a photolithographic process. Through a sputtering process, portions of co-alloy on a depositing substrate are transferred to the receiving substrate with the photoresist mask. The photoresist mask is removed from the receiving substrate. The remaining co-alloy portions on the receiving substrate undergo a de-alloying process to form an array of nanoporous contacts.

Embodiments relate to forming nanoporous contacts on a receiving substrate without using a seed layer on the receiving substrate. The nanoporous contacts can be used to create bonds between electronic components and the receiving substrate. To form the contacts, a photoresist mask is created on the receiving substrate by a photolithographic process. Through a sputtering process, portions of co-alloy on a depositing substrate are transferred to the receiving substrate with the photoresist mask. The photoresist mask is removed from the receiving substrate. The remaining co-alloy portions on the receiving substrate undergo a de-alloying process to form an array of nanoporous contacts.

A non alpha controlled plating bath including Tin species and a trace amount of Polonium species is utilized in a plating tool. The plating tool includes a Polonium filter element to remove Polonium species from the plating bath to selectively plate Tin upon a plating cathode. The filter may include a Titanium inner portion surrounding by a stannic oxide exterior. The filter may reduce the Polonium species by having the polonium absorb and then enter within the stannic oxide matrix. The filter may be located within the plating tool reservoir or filter housing. The filter may be fabricated by forming Tin upon a Titanium backbone and converting the Tin to stannic oxide.