A semiconductor package with improved solderability at sidewall includes a chip, a molding compound encapsulating the chip, and multiple leads distributed at sidewalls of the semiconductor package. The leads are formed as a conductive layer that is electrically connected to bonding pads of the chip. Each of the leads has a stepped surface exposed from the molding compound, wherein the stepped surface is shaped by two sequentially overlapped photoresist layers. The stepped surface of each lead allows to accommodate more solder to enhance the reliability of a solder joint between the semiconductor and a printed circuit board. Therefore, the solder joints of the semiconductor package are easily inspected by automatic optical inspection (AOI) equipment.

Methods of reflowing electrically conductive elements on a wafer may involve directing a laser beam toward a region of a surface of a wafer supported on a film of a film frame to reflow at least one electrically conductive element on the surface of the wafer. In some embodiments, the wafer may be detached from a carrier substrate and be secured to the film frame before laser reflow. Apparatus for performing the methods, and methods of repairing previously reflowed conductive elements on a wafer are also disclosed.

An object is to allow for simple measurement of a bump height. There is provided. a device for measuring a bump height comprising: a light sensor provided with a light source and a light-receiving element and configured to irradiate a substrate including a seed layer, a resist layer formed on the seed layer and a bump formed in an opening of the resist layer, with light emitted from the light source and to detect reflected light that is reflected from the seed layer via the resist layer and reflected light that is reflected from the bump, by the light-receiving element; and a control device configured to calculate a height of the bump relative to the seed layer, based on the reflected light from the seed layer and the reflected light from the bump and to subtract an error caused by a refractive index of the resist layer from the height of the bump calculated based on the reflected lights, so as to correct the height of the bump.

A plating system comprising a plating tank for applying plate processing to a substrate, a sensor configured to measure actual plating film thickness of the substrate, and a controller configured to control plating current supplied to the plating tank and plating time for the plate processing of the substrate within the plating tank. The controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe. At least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and the result is reflected in the plate processing for the subsequent substrate.

Methods of reflowing electrically conductive elements on a wafer may involve directing a laser beam toward a region of a surface of a wafer supported on a film of a film frame to reflow at least one electrically conductive element on the surface of the wafer. In some embodiments, the wafer may be detached from a carrier substrate and be secured to the film frame before laser reflow. Apparatus for performing the methods, and methods of repairing previously reflowed conductive elements on a wafer are also disclosed.

A ball disposition system includes a ball adsorption device, and a ball guide plate providing a ball guide hole. The ball adsorption device includes an adsorption plate providing an adsorption hole extending in a first direction, and a pin extending in the first direction, a portion of the pin inserted in the adsorption hole. The ball guide plate is located beyond the adsorption plate in the first direction.

In an Injection Molded Soldering system, a single, one-layer decal has one or more through hole patterns where each through hole pattern has a plurality of through holes through the decal. A drum with a drum circumference turns while the decal is forced to be adjacent to the drum circumference. The decal passes by a tangent point on the drum circumference where one or more solder-filled through hole patterns align with recessed openings on a substrate at the tangent point of the drum circumference. Applied heat causes the solder structures to melt and flow into the recessed openings.

In an embodiment, a device includes: a semiconductor substrate; a contact pad on the semiconductor substrate; a passivation layer on the contact pad and the semiconductor substrate; a die connector extending through the passivation layer, the die connector being physically and electrically coupled to the contact pad, the die connector including a first conductive material, the first conductive material being a Lewis acid having a first acid hardness/softness index; a dielectric layer on the die connector and the passivation layer; and a protective layer disposed between the dielectric layer and the die connector, the protective layer surrounding the die connector, the protective layer including a coordination complex of the first conductive material and an azole, the azole being a Lewis base having a first ligand hardness/softness index, where a product of the first acid hardness/softness index and the first ligand hardness/softness index is positive.

A unitary wafer assembly arrangement for the application of solder balls onto a substrate for subsequent use in the electronics industry. This wafer tool assembly comprises a number of modules connected to one another and all serviced by a robotic arm to transfer processed wafers from one module to another. The tool assembly comprises a load port and pre-aligner module, a binder module, a solder ball mount module and a reflow module. A wafer inspection and repair module arrangement is also part of the tool assembly.

In an embodiment, a device includes: a semiconductor substrate; a contact pad on the semiconductor substrate; a passivation layer on the contact pad and the semiconductor substrate; a die connector extending through the passivation layer, the die connector being physically and electrically coupled to the contact pad, the die connector including a first conductive material, the first conductive material being a Lewis acid having a first acid hardness/softness index; a dielectric layer on the die connector and the passivation layer; and a protective layer disposed between the dielectric layer and the die connector, the protective layer surrounding the die connector, the protective layer including a coordination complex of the first conductive material and an azole, the azole being a Lewis base having a first ligand hardness/softness index, where a product of the first acid hardness/softness index and the first ligand hardness/softness index is positive.