Described are concepts, systems, circuits and techniques related to shielded through via structures and methods for fabricating such shielded through via structures. The described shielded through via structures and techniques allow for assembly of multi-layer semiconductor structures including one or more superconducting semiconductor structures (or integrated circuits).

A non alpha controlled alloy that includes a metal and an alpha emitting material is utilized as a plating anode to selectively plate the metal upon a plating cathode. The metal may be selectively plated by pulse plating the non alpha controlled alloy with current control to suppress plating of the alpha emitting material upon the plating cathode. The metal may also be selectively plated by pulse plating the non alpha controlled alloy with potential control to suppress plating of the alpha emitting material upon the plating cathode. The metal may also be selectively plated by plating out the alpha emitting material upon a filtering cathode.

The present invention relates to an apparatus and method for wafer oxide removal and reflow treatment. In particular, the present invention relates to an apparatus for wafer oxide removal and reflow treatment, comprising: a heating plate, a sample plate for supporting a wafer sample above the heating plate, and an electron attachment pin plate above the sample plate, wherein the heating plate is configured to be capable of moving up and down, and contacting and heating the sample plate.

A plating product fabrication method includes forming a first concentrate. The concentrate includes a metal species, such as Tin, and a trace amount of an alpha emitting species, such as Polonium. The plating product fabrication method also includes creating a circuit between a filtering anode and a filtering cathode and reducing the alpha emitting species from the concentrate by plating the alpha emitting species upon the filtering cathode. In this manner, a purified concentrate is formed. The purified concentrate may be utilized to plate the metal species upon a plating cathode. The purified concentrate may be utilized to form a purified metal species.

A plating product fabrication method includes forming a first concentrate. The concentrate includes a Tin (Sn) species and a trace amount of Polonium (Po) species. The plating product fabrication method also includes creating a circuit between a filtering anode and a filtering cathode and reducing the Po species from the concentrate by plating Po upon the filtering cathode. In this manner, a purified Sn concentrate is formed. The purified Sn concentrate may be utilized to plate Sn upon a plating cathode. The purified Sn concentrate may be utilized to form purified Sn.

A method of fabricating an interconnect structure includes providing a semiconductor structure and performing a first spin resist and bake cycle. The first spin resist and bake cycle includes applying a first predetermined amount of a resist material over one or more portions of the semiconductor structure and baking the semiconductor structure to form a first resist layer portion of a resist layer. The method also includes performing a next spin resist and bake cycle. The next spin resist and bake cycle includes applying a next predetermined amount of the resist material and baking the semiconductor structure to form a next resist layer portion of the resist layer. The method additionally includes depositing a conductive material in an opening formed in the resist layer and forming a conductive structure from the conductive material. An interconnect structure is also provided.

A barrier layer BAL is formed so as to be in contact with an aluminum pad ALP. A titanium alloy layer including a titanium film and a titanium nitride film is formed as barrier layer BAL. A seed layer SED is formed so as to be in contact with barrier layer BAL. A copper film is formed as seed layer SED. A silver bump AGBP is formed so as to be in contact with seed layer SED. Silver bump AGBP is constructed with a silver film AGPL formed by an electrolytic plating method. A tin alloy ball SNB is bonded to silver bump AGBP.

Embodiments of the present disclosure provides a chip and a method of forming the same and a package structure, the chip includes a base substrate and conductive bumps located on the base substrate, a planar shape of each bump has a long axis and a short axis extending through a center of the bump, a length of the long axis is greater than that of the short axis, the conductive bumps include bump unit rows each of which includes initial bump units arranged along a first direction and a first expanded bump unit located between adjacent initial bump units; the bump unit rows are arranged in a second direction, with a second expanded bump unit disposed between adjacent bump unit rows, the conductive bumps include a first pattern, a second pattern and an additional pattern formed by corresponding bumps, and each having bumps with different rotation angles.

A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

An arrangement and process for the fluxless manufacture of an integrated circuit component, comprising the steps of loading a solder ball and chip arrangement, solder ball side up or down, onto a donor chuck; removing the solder ball and chip arrangement from the donor chuck by a computer-controlled gripper mechanism; moving the solder ball and chip arrangement via the gripper mechanism onto a computer-controlled gang carrier, flipping the gang carrier about a horizontal axis so as to arrange the solder ball and chip arrangement into an inverted, solder ball side down orientation over a receiver chuck substrate; and compressing the solder ball side down solder ball and chip arrangement onto the receiver chuck substrate by a computer-controlled compression rod so as to bond the solder ball side down solder ball and chip arrangement onto the receiver chuck substrate so as to form an integrated circuit assembly.