The present disclosure provides a method for fabricating a semiconductor device including providing a first semiconductor die, forming a connection dielectric layer above the first semiconductor die, forming a first bottom protection layer in the connection dielectric layer, forming a first conductive plate on the first bottom protection layer, and forming a first top protection layer on the first conductive plate. The first bottom protection layer and the first top protection layer are formed of manganese-zinc ferrite, nickel-zinc ferrite, cobalt ferrite, strontium ferrite, barium ferrite, lithium ferrite, lithium-zinc ferrite, single crystal yttrium iron garnet, or gallium substituted single crystal yttrium iron garnet.

The present disclosure provides a method for fabricating a semiconductor device including providing a first semiconductor die, forming a connection dielectric layer above the first semiconductor die, forming a first bottom protection layer in the connection dielectric layer, forming a first conductive plate on the first bottom protection layer, and forming a first top protection layer on the first conductive plate. The first bottom protection layer and the first top protection layer are formed of manganese-zinc ferrite, nickel-zinc ferrite, cobalt ferrite, strontium ferrite, barium ferrite, lithium ferrite, lithium-zinc ferrite, single crystal yttrium iron garnet, or gallium substituted single crystal yttrium iron garnet.

A chip package includes a first substrate, a second substrate, a first conductive layer, and a metal layer. The first substrate has a bottom surface and an inclined sidewall adjoining the bottom surface, and an obtuse angle is between the bottom surface and the inclined sidewall. The second substrate is over the first substrate and has a portion that laterally extends beyond the inclined sidewall of the first substrate. The first conductive layer is between the first substrate and the second substrate. The metal layer is on said portion of the second substrate, on the bottom surface and the inclined sidewall of the first substrate, and electrically connected to an end of the first conductive layer.

Disclosed herein is a solid state imaging device including a support substrate; an imaging semiconductor chip having a pixel array disposed on the support substrate; and an image processing semiconductor chip disposed on the support substrate, wherein the imaging semiconductor chip and the image processing semiconductor chip are connected by through-vias, and interconnects formed on the support substrate.

A chip transfer method including: disposing a target substrate in a closed cavity, the target substrate including a first alignment bonding structure and a second alignment bonding structure; applying a charge of a first polarity to the first alignment bonding structure of the target substrate; applying a charge of a second polarity to a first chip bonding structure of a chip; injecting an insulating fluid into the closed cavity to suspend the chip in the insulating fluid within the closed cavity; and applying a bonding force to the chip.

A display device includes a base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A display device includes a base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

Disclosed is a method of manufacturing a semiconductor device that includes securing a lower surface of a wafer to a supporting surface of a carrier substrate formed of copper or other metal having good thermal conductance. Further semiconductor processing for packaging can include forming an RDL on the wafer, etching scribe channels through the wafer, and coating the wafer with encapsulant. After dicing, the metal carrier remains in contact with and supporting the lower surface of the wafer, and the remainder of the wafer remains coated by the encapsulant.