Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

A method for manufacturing a light emitting device includes: roughening a light extracting surface of a semiconductor light emitting element, forming a first light transmissive layer on an entirety of the roughened light extracting surface, flattening a surface of a first light transmissive layer that is on a side opposite the semiconductor light emitting element, forming a second light transmissive layer on an entirety of a surface of an optical member, flattening a surface of the second light transmissive layer that is on a side opposite the optical member, and directly bonding the flattened surface of the first light transmissive layer and the flattened surface of second transmissive layer by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

A semiconductor device includes: a first electrode provided on a semiconductor multilayer structure; a second electrode provided on a substrate; and a bonding metal layer which bonds the first electrode and the second electrode together. The bonding metal layer includes a gap inside.

A light emitting apparatus includes at least one light emitting device; a light transparent member that receives incident light emitted from the light emitting device; and a covering member. The light transparent member is a light conversion member that has an externally exposed light emission surface and a side surface contiguous to the light emission surface. The covering member contains a light reflective material, and covers at least the side surface of said light transparent member. A content of said light reflective material is not less than 30 wt %.

Provided is a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, wherein bonding surfaces of the semiconductor light emitting element and the first light transmissive layer are roughened surfaces, bonding surfaces of the first light transmissive layer and the optical member are flat, and the first light transmissive layer and the optical member are directly bonded.

Various aspects of a light emitting apparatus include a substrate having at least one angled portion. Some aspects of the light emitting apparatus include at least one light emitting device arranged on the substrate. Some aspects of the light emitting apparatus include a plurality of conductors arranged on the substrate. In some aspects of the light emitting apparatus, the conductors are electrically coupled to the at least one light emitting device.

A method of manufacture for a semiconductor package includes; forming a molding member on side surfaces of the semiconductor chips, using an adhesive to attach a carrier substrate to upper surfaces of the molding member and the semiconductor chips, using a first blade having a first blade-width to cut away selected portions of the carrier substrate and portions of the adhesive underlying the selected portions of the carrier substrate, and using the first blade to partially cut into an upper surface of the molding member to form a first cutting groove, wherein the selected portions of the carrier substrate are dispose above portions of the molding member between adjacent ones of semiconductor chips, using a second blade having a second blade-width narrower than the first blade-width to cut through a lower surface of the molding member to form a second cutting groove, wherein a combination of the first cutting groove and the second cutting groove separate a package structure including a semiconductor chip supported by a cut portion of the carrier substrate and bonding the package structure to an upper surface of a package substrate.

Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure incudes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

A power amplifier module includes a substrate, a power amplifier having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces a principal surface of the substrate, a surface acoustic wave duplexer having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces the principal surface of the substrate, a heat dissipation unit defined on another principal surface of the substrate, a heat dissipation path that connects a connecting portion between the power amplifier and the principal surface to the heat dissipation unit, an insulating resin that covers the power amplifier and the surface acoustic wave duplexer, a conductive shield that covers the insulating resin, and a first conductive unit defined on the second surface of the surface acoustic wave duplexer and electrically connected to the conductive shield.

A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.