A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

In an elastic wave filter apparatus, IDT electrodes and first and second electrode lands are provided on a first main surface of a piezoelectric substrate. The piezoelectric substrate, a supporting layer, and a covering member define a hollow portion. A signal terminal, a ground terminal, and a heat diffusion layer are provided on a second main surface of the piezoelectric substrate. The first and second electrode lands are electrically connected by first and second connection electrodes to the signal terminal and the ground terminal, respectively. The heat diffusion layer is provided at a position where the heat diffusion layer overlaps at least a portion of the IDT electrodes across the piezoelectric substrate.

A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

A light emitting device includes a first light transmissive supportive substrate having a first light transmissive insulator and a conductive circuitry layer provided on a surface of the first light transmissive insulator, a second light transmissive supportive substrate having a second light transmissive insulator and disposed in such a way that a surface of the second light transmissive insulator faces the conductive circuitry layer and so as to have a predetermined gap from the first light transmissive supportive substrate, a light emitting diode having a main body, and first and second electrodes provided on a surface of the main body and electrically connected to the conductive circuitry layer via a conductive bump, and laid out between the first and second light transmissive supportive substrates, and a third light transmissive insulator embedded in a space between the first light transmissive supportive substrate and the second light transmissive supportive substrate.

A light transmissive first insulating film having light transmissive property to visible light, a second insulating film arranged opposite to the first insulating film, a plurality of conductor patterns formed of, for example, mesh patterns having the light transmissive property to the visible light and formed on a surface of at least one of the first insulating film and the second insulating film, a plurality of first light-emitting devices connected to any two conductor patterns of the plurality of conductor patterns, and a resin layer arranged between the first insulating film and the second insulating film to hold the first light-emitting devices are included.

A light emitting device according to embodiments includes a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a submount disposed to face the substrate, first and second metal pads disposed on the submount to be spaced apart from each other, a first bump disposed on the first metal pad, a plurality of second bumps disposed on the second metal pad to be spaced apart from each other, a first ohmic layer interposed between the first conductive semiconductor layer and the first bump, a second ohmic layer interposed between the second conductive semiconductor layer and the plurality of second bumps, a first spreading layer interposed between the first ohmic layer and the first bump, a second spreading layer interposed between the second ohmic layer and the plurality of second bumps, and a current blocking layer disposed in a maximum heating area of the second ohmic layer overlapping an area between the plurality of second bumps in a thickness direction of the light emitting structure such that the current blocking layer does not cut the second ohmic layer in a horizontal direction intersecting the thickness direction.

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.