A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

An electronic package having a base structure; a layer stack formed over the base structure; and a component embedded at least partially within the base structure and/or within the layer stack. The layer stack has a decoupling layer structure, the decoupling layer structure with a decoupling material having a Young Modulus being smaller than 1 GPa.

A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

A semiconductor package includes a base structure having a fan-in area and fan-out areas surrounding the fan-in area, a semiconductor chip in the fan-in area, a package body layer in the fan-in area and the fan-out areas and covering the semiconductor chip, a redistribution structure on the package body layer, and alignment marks on the redistribution structure in a plan view. Each of the alignment marks includes a plurality of metal layers, and a plurality of auxiliary patterns are in the redistribution structure under the alignment marks to assist in recognition of the alignment marks.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

Semiconductor packages and methods of forming the same are provided. One of the semiconductor package includes a first die, a dummy die, a first redistribution layer structure, an insulating layer and an insulating layer. The dummy die is disposed aside the first die. The first redistribution layer structure is electrically connected to the first die and having connectors thereover. The insulating layer is disposed over the first die and the dummy die and opposite to the first redistribution layer structure. The insulating layer penetrates through the insulating layer.

An electronic assembly may include a component comprising conductive studs disposed over an active layer of the component. A first encapsulant layer may be disposed around four side surfaces of the component, over the active layer of the component, and contacting at least a portion of the sides of the conductive studs. A substantially planar surface may be disposed over the active layer of the component, wherein the substantially planar surface comprises ends of the conductive studs and the first encapsulant layer. The first encapsulant layer comprises a roughness less than 500 nanometers. First conductive elements may be disposed over the encapsulant and coupled with the conductive studs. A second layer of encapsulant may be disposed over the first conductive elements.

An electronic component array includes a backplane substrate, and a plurality of integrated circuit elements on the backplane substrate. Each of the integrated circuit elements includes a chiplet substrate having a connection pad and a conductor element on a surface thereof. The connection pad and the conductor element are electrically separated by an insulating layer that exposes at least a portion of the connection pad. At least one of the integrated circuit elements is misaligned on the backplane substrate relative to a desired position thereon. A plurality of conductive wires are provided on the backplane substrate including the integrated circuit elements thereon, and the connection pad of each of the integrated circuit elements is electrically connected to a respective one of the conductive wires notwithstanding the misalignment of the at least one of the integrated circuit elements. Related fabrication methods are also discussed.

A method for manufacturing a module including a predetermined number of multilayered memories includes a multilayered wafer formation step of forming a multilayered wafer by bumpless stacking of a plurality of memory wafers; a singulating step of singulating the multilayered wafer into multilayered memories; a rearranging step of rearranging the plurality of multilayered memories in a predetermined shape; a molding step of molding the rearranged multilayered memories; a wiring formation step of forming external wiring in the multilayered memories; and a separation step of separating into a memory module including a predetermined number of molded multilayered memories.

A semiconductor package includes a lower redistribution wiring layer having a first region and a second region adjacent the first region and including first redistribution wirings; a semiconductor chip on the first region of the lower redistribution wiring layer and electrically connected to the first redistribution wirings; a sealing member on a side surface of the semiconductor chip and on the lower redistribution wiring layer; a plurality of vertical conductive structures penetrating the sealing member on the second region of the lower redistribution wiring layer and electrically connected to the first redistribution wirings; a marking pattern on the semiconductor chip; seed layer pads on respective end portions of the vertical conductive structures that are exposed by the sealing member at an upper surface thereof; and an upper redistribution wiring layer on the sealing member and the marking pattern and including second redistribution wirings.