A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

An electronic assembly may include a component comprising conductive studs disposed over an active layer of the component. A first encapsulant layer may be disposed around four side surfaces of the component, over the active layer of the component, and contacting at least a portion of the sides of the conductive studs. A substantially planar surface may be disposed over the active layer of the component, wherein the substantially planar surface comprises ends of the conductive studs and the first encapsulant layer. The first encapsulant layer comprises a roughness less than 500 nanometers. First conductive elements may be disposed over the encapsulant and coupled with the conductive studs. A second layer of encapsulant may be disposed over the first conductive elements.

A semiconductor structure includes a first die; a molding surrounding the first die; a redistribution layer (RDL) disposed under the first die and the molding, and including a plurality of first conductive pads and a dielectric layer surrounding the plurality of first conductive pads; a second die disposed under the RDL, and including a plurality of first die pads over the second die; and a plurality of first conductive bumps disposed between the RDL and the second die, wherein each of the plurality of first conductive bumps is electrically coupled with corresponding one of the plurality of first die pads and corresponding one of the plurality of first conductive pads, the plurality of first die pads are respectively arranged at corners of the second die, and the plurality of first conductive bumps are electrically connected in series.

Gap-fill dielectrics for die structures and methods of forming the same are provided. In an embodiment, a device includes: an outer gap-fill dielectric having a first coefficient of thermal expansion; a first integrated circuit die in the outer gap-fill dielectric; a second integrated circuit die in the outer gap-fill dielectric; an inner gap-fill dielectric between the first integrated circuit die and the second integrated circuit die, the inner gap-fill dielectric having a second coefficient of thermal expansion, the second coefficient of thermal expansion being greater than the first coefficient of thermal expansion; and a third integrated circuit die over the inner gap-fill dielectric, the third integrated circuit die bonded to the first integrated circuit die and to the second integrated circuit die.

A package is provided. The package includes a first semiconductor device having a first functional layer. The first functional layer includes a first functional component. The package also includes a second semiconductor device over the first semiconductor device. The second semiconductor device includes a second functional layer having a second functional component. The second functional layer is over a base layer. The base layer is coupled to the second functional layer on a first surface, and is coupled to the first functional layer on a second surface. The first surface and the second surface are on opposite sides of the base layer.

A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

An example semiconductor package includes a first redistribution layer, a bridge chip attached to a top surface of the first redistribution layer, a mold layer on the first redistribution layer and enclosing the bridge chip, a second redistribution layer disposed on the mold layer, a conductive post extending through the mold layer vertically and connecting the first redistribution layer and the second redistribution layer, and a first semiconductor chip mounted on the second redistribution layer. The first redistribution layer includes a pad layer and an interconnection layer disposed on the pad layer. The pad layer includes a first insulating layer and pads in the first insulating layer. Top surfaces of the pads are exposed to an outside of a top surface of the first insulating layer, and bottom surfaces of the pads are exposed to an outside of a bottom surface of the first insulating layer.

A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation.

An electronic package and a manufacturing method thereof are provided, in which an electronic element stacking structure is disposed on a carrier structure to integrate multiple chips into a single package, so that the electronic package can meet with the requirements of miniaturization without increasing the layout area of the carrier structure.

In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.