In one example, an electronic assembly comprises a first semiconductor device and a second semiconductor device. Each of the first semiconductor device and the second semiconductor devices comprises a substrate comprising a top surface and a conductive structure, an electronic component over the top surface of the substrate, a dielectric material over the top surface of the substrate and contacting a side of the electronic component, a substrate tab at an end of substrate and not covered by the dielectric material, wherein the conductive structure of the substrate is exposed at the substrate tab, and an interconnect electrically coupled to the conductive structure at the substrate tab of the first semiconductor device and the conductive structure at the substrate tab of the second semiconductor device. Other examples and related methods are also disclosed herein.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.

A semiconductor module includes: a supporting substrate; a conductive substrate bonded to the supporting substrate; a switching semiconductor element electrically bonded to the conductive substrate; and a conducting member that forms a path of a main circuit current switched by the semiconductor element. The conducting member is arranged to overlap with the obverse surface of the conductive substrate as viewed in a thickness direction of the supporting substrate. The conducting member is formed with an opening that overlaps with the obverse surface of the conductive substrate and does not overlap with the semiconductor element as viewed in the thickness direction.

A semiconductor device A1 includes a semiconductor element 10A having an element obverse face 101 and an element reverse face 102, the element obverse face 101 having an obverse face electrode 11 formed thereon and the element reverse face 102 having a reverse face electrode 12 formed thereon, a conductive substrate 22A including an obverse face 221A opposed to the element reverse face 102, and to which the reverse face electrode 12 is conductively bonded, a conductive substrate 22B including an obverse face 221B and spaced from the conductive substrate 22A in a width direction x, and a lead member 51 extending in the width direction x, and electrically connecting the obverse face electrode 11 and the conductive substrate 22B. The lead member 51 is located ahead of the obverse face 221B in the direction in which the obverse face 221B is oriented, and bonded to the obverse face electrode 11 via a lead bonding layer 32. The conductive substrate 22A, the semiconductor element 10A, and the lead bonding layer 32 overlap with the conductive substrate 22B, as viewed in the width direction x.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

In an embodiment, a semiconductor module includes a low side switch and a high side switch. The low side switch and the high side switch are arranged laterally adjacent one another and coupled in series between a ground package pad and a voltage input (VIN) package pad of the semiconductor module and form a half bridge configuration having an output node. The semiconductor module further includes a first capacitor pad coupled to ground potential and a second capacitor pad coupled to a VIN potential. The first capacitor pad is arranged vertically above the low side switch and the second capacitor pad is arranged vertically above the high side switch.

A package structure for a power semiconductor device is provided, including: a substrate; two or more semiconductor dies on the substrate, each of the semiconductor dies includes a first power switching pad, a second power switching pad and a gate; a gate control conductive trace, a first power switching contact and a second power switching contact are further arranged on the substrate, the gate control conductive trace is connected to each of the semiconductor dies via a bonding component, and the bonding component connecting a first semiconductor die to the gate control conductive trace is sandwiched between circuit lines formed by connecting the second power switching pads of the first semiconductor die and the neighboring second semiconductor die, to second power switching contact of the substrate.

A semiconductor device A1 includes a semiconductor element 10A having an element obverse face 101 and an element reverse face 102, the element obverse face 101 having an obverse face electrode 11 formed thereon and the element reverse face 102 having a reverse face electrode 12 formed thereon, a conductive substrate 22A including an obverse face 221A opposed to the element reverse face 102, and to which the reverse face electrode 12 is conductively bonded, a conductive substrate 22B including an obverse face 221B and spaced from the conductive substrate 22A in a width direction x, and a lead member 51 extending in the width direction x, and electrically connecting the obverse face electrode 11 and the conductive substrate 22B. The lead member 51 is located ahead of the obverse face 221B in the direction in which the obverse face 221B is oriented, and bonded to the obverse face electrode 11 via a lead bonding layer 32. The conductive substrate 22A, the semiconductor element 10A, and the lead bonding layer 32 overlap with the conductive substrate 22B, as viewed in the width direction x.