A semiconductor device includes a semiconductor element having an electrode, material of which is first metal, a lead frame through which a plurality of holes extend with an outer contour of the electrode being avoided in a first portion, and having the first portion, material of which is second metal, a bonding layer interposed between the first portion and the electrode, and solder being inside the plurality of holes and adjoining the bonding layer, the solder being thicker than the bonding layer. The plurality of holes have a plurality of first holes extending through the first portion in a thickness direction of the first portion. The bonding layer has a first bonding layer located on the electrode side and being an alloy of the first metal and tin, and a second bonding layer located on the first portion side and being an alloy of the second metal and tin. The plurality of first holes are located in an annular region inside the outer contour of the electrode.

Provided is a semiconductor module, including: a semiconductor chip; a circuit board on which the semiconductor chip is mounted; a sealing resin including epoxy resin for sealing the semiconductor chip and the circuit board; and a reinforcing material, with a higher Young's modulus than the sealing resin, provided in close contact with the sealing resin above at least a part of the sealing resin. The semiconductor module includes a resin case for enclosing spaces for housing the semiconductor chip, wherein the sealing resin may be provided inside the resin case.

A semiconductor device includes: a first wiring layer having a first main surface facing a thickness direction; a second wiring layer having a second main surface facing the same side as the first main surface and located away from the first wiring layer; a first semiconductor element having a first main surface electrode and bonded to the first main surface; a second semiconductor element having a second main surface electrode and bonded to the second main surface; a first terminal electrically connected to the second main surface electrode; a first conductive member bonded to the first main surface electrode and the second main surface; and a second conductive member bonded to the second main surface electrode and the first terminal, wherein the first terminal is located away from the first wiring layer in the thickness direction, and the second conductive member overlaps the first wiring layer in the thickness direction.

A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements.

A power control unit includes a plurality of power devices, a heat dissipation member disposed to face the power device with an insulating resin member interposed therebetween, and a plurality of plate-shaped bus bars each of which has one end connected to the power device, in which at least one of the plurality of bus bars is erected so that a direction along a plate width is aligned with a direction along a normal line of a surface of the heat dissipation member facing the power device, the power devices are arranged in a row along one direction in a straight line, an input bus bar is disposed on one side of the power device in a direction orthogonal to an arrangement direction of the power device, and an output bus bar is disposed on the other side of the power device in the orthogonal direction.

A semiconductor device includes: a plurality of semiconductor chips each including a first main electrode on a top surfaces and including a second main electrode and a control electrode on a bottom surface; a first common main electrode connected to the first main electrodes; a printed board including a control wiring part and a main wiring part provided on a bottom surface of an insulating layer, and a common control electrode and a second common main electrode provided on a top surface of the insulating layer and electrically connected to the control wiring part and the main wiring part; projection electrodes bonding the control electrodes to the control wiring part; projection electrodes bonding the second main electrodes to the main wiring part; and a sealing member sealing the semiconductor chips and exposing the first common main electrode, the common control electrode, and the second common main electrode.

A lighting assembly is disclosed which includes a leadframe and at least one light-emitting diode (LED) element arranged on the leadframe. At least a portion of the leadframe is covered with a polyurethane coating arranged to electrically insulate the portion of the leadframe, and at least a portion of the polyurethane covered portion of the leadframe is further covered with a thermally conductive material. A method for manufacturing the lighting assembly is also disclosed.

A semiconductor device includes a first insulating resin member sealing a mounting surface of a lead frame, and a second insulating resin member sealing a heat dissipating surface. The second insulating resin member contains a filler having a maximum diameter of 0.02 mm to 0.075 mm. The second insulating resin member includes a thin molded portion formed in contact with the heat dissipating surface of the lead frame. The thin molded portion has a thickness 1.1 times to 2 times the maximum diameter of the filler. The semiconductor device includes, at an interface between the first insulating resin member and the second insulating resin member, a mixture layer in which these resins are mixed with each other.

A semiconductor module is provided, where a coolant circulation portion of a cooling apparatus has a first coolant flow channel and a second coolant flow channel arranged so as to sandwich therebetween a fin region in which a cooling fin is provided, and each having two ends in a longitudinal direction, a casing portion of the cooling apparatus includes a first opening provided on an end side corresponding to a first end of the first coolant flow channel and a second opening provided on an end side corresponding to a second end of the second coolant flow channel, the second end and the first end are arranged on the same side of the casing portion, and the first coolant flow channel and the second coolant flow channel are each at least partly provided below the cooling fin.

Various embodiments may provide a semiconductor package. The semiconductor package may include a first electrical component, a second electrical component, a first heat sink, and a second heat sink bonded to a first package interconnection component and a second package interconnection component. The first package interconnection component and the second package interconnection component may provide lateral and vertical interconnections in the package.