A package structure includes a metal member and a resin member. The metal member has an obverse surface facing one side in a first direction. The resin member is disposed in contact with at least a portion of the obverse surface. The obverse surface has a roughened area. The roughened area includes a plurality of first trenches recessed from the obverse surface, each of the first trenches having a surface with a greater roughness than the obverse surface. The plurality of first trenches extend in a second direction perpendicular to the first direction and are next to each other in a third direction perpendicular to the first direction and the second direction. The plurality of first trenches are filled up with the resin member.

An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.

In one general aspect, an apparatus can include a leadframe including a plurality of leads configured to provide electrical connections for the apparatus. The apparatus can also include a semiconductor die disposed on the leadframe and a conductive clip electrically coupling the semiconductor die with the leadframe. The apparatus can further include a heat slug disposed on the conductive clip. The heat slug can include a thermally conductive and electrically insulative material.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor device according to the present disclosure includes a first semiconductor element; a first connecting member; and a first member. The first semiconductor element has a first element obverse surface and a first element reverse surface that face mutually opposite in a thickness direction. The first semiconductor element also has a first electrode disposed on the first element obverse surface. The first connecting member is electrically connected to the first electrode. The first member overlaps with the first electrode as viewed in the thickness direction, has a Vickers hardness lower than a Vickers hardness of the first connecting member, and has electroconductivity.

An electric power conversion apparatus includes a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that has an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module includes first and second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further includes a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.

An electric power conversion apparatus includes a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that has an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module includes first and second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further includes a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.

A semiconductor device includes a first chip pad, a power semiconductor chip arranged on the first chip pad and including at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

A semiconductor device includes: a circuit unit including a semiconductor chip; a plurality of pin terminals formed in a rod shape extending in a same direction from the circuit unit and electrically connected to the circuit unit; a sealing resin portion sealing the circuit unit and first portions of the plurality of pin terminals positioned on a side of the circuit unit; and a plurality of covering resin portions integrally extending from an outer surface of the sealing resin portion from which second portions of the plurality of pin terminals protrude, the plurality of covering resin portions being formed in a cylindrical shape respectively covering base end portions of the second portions of the plurality of pin terminals, which are positioned on a side of the sealing resin portion.

Provided is a semiconductor package having an exposed heat sink for high thermal conductivity. The semiconductor package includes at least one semiconductor chip 110, the lead frame 120, a signal line 130, the sealing member 140, and at least one heat sink 150, wherein the lead frame 120 has a first surface, to which the semiconductor chips 110 are attached, and a second surface facing the first surface, the signal line 130 electrically connects the semiconductor chips 110 and the semiconductor chip 110 to the lead frame 120 by wire bonding or clip bonding, the sealing member 140 surrounds areas where the semiconductor chips 110 are attached, except for an external connection terminal 121 of the lead frame 120, and exposes the second surface of the lead frame 120, and the at least one heat sink 150 are attached to the second surface of the exposed lead frame 120. Here, spaces A and B are interposed between the sealing member 140 and the heat sink 150 which face each other, and the heat sink 150 is attached to the second surface of the lead frame 120 after molding of the sealing member 140. Accordingly, the sealing member 140 and the heat sink 150 may be prevented from being warped and thus, stress directly applied to the semiconductor chip 110 is removed. Therefore, reliability and electrical characteristics may be stably secured, and a terminal used in electrical connection may be easily secured through the lead frame 120 exposed to the outside of the sealing member 140.