A method includes forming one or more vias in a substrate, forming a first photoresist layer on a top surface of the substrate and a second photoresist layer on a bottom surface of the substrate, patterning the first photoresist layer and the second photoresist layer to remove at least a first portion of the first photoresist layer and at least a second portion of the second photoresist layer, filling the one or more vias, the first portion and the second portion with solder material using injection molded soldering, and removing remaining portions of the first photoresist layer and the second photoresist layer.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

A chip packaging method includes followings steps. A plurality of first chips are disposed on a carrier, wherein each of the first chips has a first active surface, and a plurality of first conductive pillars are disposed on the first active surface. A second active surface of a second chip is electrically connected to the first active surfaces of the first chips through a plurality of second conductive pillars. An encapsulated material is formed, wherein the encapsulated material covers the plurality of first chips, the plurality of first conductive pillars, the second chip and the plurality of second conductive pillars. The encapsulated material is partially removed to expose each of the plurality of first conductive pillars. A redistribution structure is formed on the encapsulated material, wherein the redistribution structure connects with the first conductive pillars.

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

An apparatus includes a substrate having one or more vias formed therein. At least one of the vias has at least one liner disposed on at least one sidewall thereof. The apparatus also includes at least one interconnect formed through the at least one via. The one or more interconnects comprise a solder material filled using injection molded soldering.

A method includes forming one or more vias in a substrate, forming at least one liner on at least one sidewall of at least one of the vias, and filling said at least one via with solder material using injection molded soldering. The at least one liner may comprise a solder adhesion layer, a barrier layer, or a combination of a barrier layer and a solder adhesion layer.

A semiconductor arrangement is provided. The semiconductor arrangement may include an electrically conductive plate having a surface, a plurality of power semiconductor devices arranged on the surface of the electrically conductive plate, wherein a first controlled terminal of each power semiconductor device of the plurality of power semiconductor devices may be electrically coupled to the electrically conductive plate, a plurality of electrically conductive blocks, wherein each electrically conductive block may be electrically coupled with a respective second controlled terminal of each power semiconductor device of the plurality of power semiconductor devices; and encapsulation material encapsulating the plurality of power semiconductor devices, wherein at least one edge region of the surface of the electrically conductive plate may be free from the encapsulation material.