A semiconductor device includes a first lead, a second lead, a third lead, a semiconductor element, a sealing resin and a coating layer. The sealing resin has a bottom surface and an outer side surface. The bottom surface of the sealing resin is formed with a recess having an inner side surface. The second lead includes a reverse surface exposed at the bottom surface and a side surface exposed at the outer side surface. The coating layer contains a metal element and covers the reverse surface and the side surface. The recess is located between the first lead and the second lead. The second lead and at least one of the first lead and the third lead have inner end surfaces exposed at the inner side surface.

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Various embodiments may provide a semiconductor package. The semiconductor package may include a first electrical component, a second electrical component, a first heat sink, and a second heat sink bonded to a first package interconnection component and a second package interconnection component. The first package interconnection component and the second package interconnection component may provide lateral and vertical interconnections in the package.

A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.

In a first step of a method of manufacturing a semiconductor device, a portion to be the first lead frame is formed by selectively punching a metal plate, furthermore, notch portions depressed in the reference direction are formed on both side surfaces of a portion, of the first lead frame where the first bent portion is formed, in line contact with the first conductive layer in the reference direction; in the second step of the method, a first bent portion is formed by bending the one end of the first lead frame so as to protrude downward along the reference direction; and in the third step of the method, the upper surface of the first conductive layer and the lower surface of the first bent portion of the first lead frame are joined at the end of the substrate, by the first conductive bonding material, furthermore, the upper surface of the first conductive layer and the notch portions of the first bent portion are joined, by embedding a part of the first conductive bonding material in the notch portions.

The one end portion of the connector of the semiconductor device includes: a horizontal portion; a first inclined portion that is connected to the horizontal portion and is located closer to the tip end side of the one end than the horizontal portion, and the first inclined portion having a shape inclined downward from the horizontal portion; and a control bending portion that is connected to the first inclined portion and positioned at the tip of the one end portion, and the control bending portion bent downwardly along the bending axis direction. The lower surface of the control bending portion is in contact with an upper surface of the second terminal.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.

An electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, a second substrate 21 provided on one side of the second electronic element 23, and an abutment body 250 that abuts on a face on one side of the second electronic element 23 and is capable of imparting a force toward one side with respect to the second substrate 21.

A semiconductor device includes: a first semiconductor element including a first signal electrode; a second semiconductor element, laminated on the first semiconductor element, including a second signal electrode; a sealing body; a first signal terminal connected to the first signal electrode; and a second signal terminal connected to the second signal electrode, wherein: the first signal terminal and the second signal terminal project from the sealing body and extend in a first direction; the first signal terminal and the second signal terminal are distanced from each other in a second direction; the first signal electrode and the second signal electrode are placed at different positions in the second direction; the first signal electrode is provided closer to the first signal terminal than to the second signal terminal; and the second signal electrode is provided closer to the second signal terminal than to the first signal terminal.