A method for fabricating a substrate structure for packaging includes providing a core substrate, a plurality of conductive pads at a first surface of the core substrate, and a metal layer at a second surface of the core substrate opposite to the first surface; forming a conductive structure, for pasting the substrate structure onto an external component, on each of the plurality of conductive pads; forming a molding compound on the first surface of the core substrate and to encapsulate the conductive structure; and forming a plurality of packaging pads by patterning the metal layer at the second surface of the core substrate.

Embodiments described herein provide techniques for testing a semiconductor package by using a diode to couple a test pad to a contact pad. In one scenario, a package comprises a die stack comprising one or more dies and a molding compound encapsulating the die stack. In this package, a substrate is over the molding compound. Also, a test pad and a contact pad are on a surface of the substrate. The contact pad is coupled to the die stack. A diode couples the test pad to the contact pad. In one example, the test pad is coupled to a P side of the diode's P-N junction and the contact pad is coupled to an N side of the diode's P-N junction. In operation, current can flow from the test pad through the contact pad (and the die stack), but current cannot flow from the contact pad through the test pad.

A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

An integrated circuit includes a lead frame, a first die, and a second die. The first die is bonded to and electrically connected to the lead frame. The second die is electrically connected to and spaced apart from the first die.

According to one embodiment, a semiconductor device includes a substrate, first stacked components, second stacked components, and a coating resin. The first stacked components include first chips and are stacked on a surface of the substrate. The second stacked components include second chips and are stacked on the surface. The coating resin covers the surface, the first stacked components, and the second stacked components. A first top surface of a second farthest one of the first chips away from the surface differs in position in a first direction from a second top surface of second farthest one of the second chips away from the surface.

A semiconductor package includes: a base substrate; a semiconductor chip stack including a plurality of semiconductor chips stacked on the base substrate in a first direction and each having an upper surface on which a plurality of pads are disposed; and bonding wire structures electrically connecting the base substrate and the semiconductor chips. The semiconductor chip stack includes a lower semiconductor chip stack and an upper semiconductor chip stack on the lower semiconductor chip stack. The plurality of semiconductor chips include a first semiconductor chip at an uppermost portion of the lower semiconductor chip stack and second semiconductor chips. The plurality of pads include first pads, aligned in a second direction, and second pads, spaced apart from the first pads in a third direction. The first pad on the first semiconductor chip, has an area larger than an area of each of the first pads on the second semiconductor chips.

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is exposed; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a protection layer including a plurality of beads embedded within a top region of the polymeric gel.

A semiconductor module includes a power element, a signal wiring, and a heat sink. The signal wiring is connected to a signal pad of the power element. The heat sink cools the power element. The power element has an active area provided by a portion where the signal pad is formed. The signal pad is thermally connected to the heat sink via the signal wiring.

Provided is a clip structure for a semiconductor package comprising: a first bonding unit bonded to a terminal part of an upper surface or a lower surface of a semiconductor device by using a conductive adhesive interposed therebetween, a main connecting unit which is extended and bent from the first bonding unit, a second bonding unit having an upper surface higher than the upper surface of the first bonding unit, an elastic unit elastically connected between the main connecting unit and one end of the second bonding unit, and a supporting unit bent and extended from the other end of the second bonding unit toward the main connecting unit, wherein the supporting unit is formed to incline at an angle of 1° through 179° from an extended surface of the main connecting unit and has an elastic structure so that push-stress applying to the semiconductor device while molding may be dispersed.