An acoustic wave device includes: a first substrate; a first acoustic wave filter located on a first surface of the first substrate; a pad that is located on the first surface and electrically separated from the first acoustic wave filter in the first surface; a ground pattern that is located on the first surface, and is located between the pad and the first acoustic wave filter in the first surface; and a second acoustic wave filter that is electrically connected to the pad, and at least partially overlaps with the first acoustic wave filter in plan view.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Implementations of a semiconductor device may include a semiconductor die including a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof where the semiconductor die may be coupled with one of a substrate, a leadframe, an interposer, a package, a bonding surface, or a mounting surface. The thickness may be between 0.1 microns and 125 microns.

In one embodiment, a semiconductor package structure includes a substrate having a well region extending from a major surface. An interposer structure is attached to the substrate within the well region. The interposer structure has a major surface that is substantially co-planar with the major surface of the substrate. An electrical device is directly attached to the substrate and the interposer structure. The interposer structure can be an active device, such as a gate driver integrated circuit, or passive device structure, such as an impedance matching network.

A semiconductor package according to the inventive concept includes a first semiconductor chip configured to include a first semiconductor device, a first semiconductor substrate, a plurality of through electrodes penetrating the first semiconductor substrate, and a plurality of first chip connection pads arranged on an upper surface of the first semiconductor substrate; a plurality of second semiconductor chips sequentially stacked on an upper surface of the first semiconductor chip and configured to each include a second semiconductor substrate, a second semiconductor device controlled by the first semiconductor chip, and a plurality of second chip connection pads arranged on an upper surface of the second semiconductor substrate; a plurality of bonding wires configured to connect the plurality of first chip connection pads to the plurality of second chip connection pads; and a plurality of external connection terminals arranged on a lower surface of the first semiconductor chip.

A semiconductor device disclosed in an embodiment comprises: a light emitting unit comprising a light emitting structure layer which has a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a sensor unit disposed on the light emitting unit, wherein the sensor unit comprises: a sensing material changing in resistance with light emitted by the light emitting unit; a first sensor electrode comprising a first pad portion and a first extension part extending from the first pad portion and contacting the sensing material; and a second sensor electrode comprising a first pad portion and a second extension part extending toward the first extension part from the second pad portion and contacting the sensing material. The sensor unit senses an external gas in response to the light generated from the light emitting unit.

A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.

According to an embodiment of the present disclosure, a method for manufacturing an integrated circuit (IC) device may include mounting an IC chip onto a center support structure of a leadframe. The leadframe may include: a plurality of pins extending from the center support structure; a groove running perpendicular to the individual pins of the plurality of pins around the center support structure; and a bar connecting the plurality of pins remote from the center support structure. The method may further include: bonding the IC chip to at least some of the plurality of pins; encapsulating the leadframe and bonded IC chip, including filling the groove with encapsulation compound; removing the encapsulation compound from the groove, thereby exposing at least a portion of the individual pins of the plurality of pins; plating the exposed portion of the plurality of pins; and cutting the IC package free from the bar by sawing through the encapsulated lead frame along the groove using a first saw width less than a width of the groove.

A microelectronic package is described with an illuminated backside exterior. In one example, the package has a package substrate, a die attached to the package substrate, a cover over the die and the package substrate, a lamp, and a screen over the die, externally visible and optically coupled to the lamp so that when the lamp is illuminated the illumination is externally visible through the screen.