Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

IC package assemblies including a molding compound in which an IC chip surface is recessed relative to the molding compound. Thickness of the IC chip may be reduced relative to its thickness during the molding process. Another IC chip, heat spreader, etc. may then occupy the resultant recess framed by the molding compound to achieve a fine stacking pitch. In some embodiments, a package-on-package (PoP) assembly includes a center-molded IC chip flip-chip-bonded to a first package substrate. A second substrate to which a second IC chip is flip-chip bonded is then electrically coupled to the first substrate by through-molding vias. Within the PoP assembly, the second IC chip may be disposed back-to-back with the center-molded IC chip so as to occupy the recess framed by the molding compound.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

Embodiments of the present application provide the chip packaging structure, the chip module and the electronic terminal. In the chip packaging structure, the chip is accommodated in the trench of the substrate to decrease the thickness and volume of the chip packaging structure; and the plastic package is provided on the surface of the substrate on which the chip is disposed to plastically package the chip, which not only ensures the structural strength of the chip packaging structure, but also reduces the warpage that may be caused due to the decrease of the thickness of the chip packaging structure as much as possible. In addition, the surface of the plastic package is treated to be a flat surface, such that the chip module has good flatness and the adaptability of the chip module is improved.

IC package assemblies including a molding compound in which an IC chip surface is recessed relative to the molding compound. Thickness of the IC chip may be reduced relative to its thickness during the molding process. Another IC chip, heat spreader, etc. may then occupy the resultant recess framed by the molding compound to achieve a fine stacking pitch. In some embodiments, a package-on-package (PoP) assembly includes a center-molded IC chip flip-chip-bonded to a first package substrate. A second substrate to which a second IC chip is flip-chip bonded is then electrically coupled to the first substrate by through-molding vias. Within the PoP assembly, the second IC chip may be disposed back-to-back with the center-molded IC chip so as to occupy the recess framed by the molding compound.

A semiconductor device includes a first semiconductor chip having a first surface, a second surface on a side of the first semiconductor chip opposite to that of the first surface, a first electrode on the first surface, a second electrode on the second surface, and a first contact electrically connecting the first electrode and the second electrode, and a second semiconductor chip having a third surface facing the first surface, a fourth surface on a side of the second semiconductor chip opposite to that of the third surface and a third electrode on the fourth surface. The semiconductor device further includes a metal wire electrically connecting the first and third electrodes, a first insulating layer on the second surface, a first conductive layer that is on the first insulating layer and electrically connected to the second electrode, and a first external terminal electrically connected to the first conductive layer.

A semiconductor package includes a mold substrate, at least one first semiconductor chip in the mold substrate and including chip pads, wiring bonding pads formed at a first surface of the mold substrate and connected to the chip pads by bonding wires, and a redistribution wiring layer covering the first surface of the mold substrate and including redistribution wirings connected to the wiring bonding wirings.

IC package assemblies including a molding compound in which an IC chip surface is recessed relative to the molding compound. Thickness of the IC chip may be reduced relative to its thickness during the molding process. Another IC chip, heat spreader, etc. may then occupy the resultant recess framed by the molding compound to achieve a fine stacking pitch. In some embodiments, a package-on-package (PoP) assembly includes a center-molded IC chip flip-chip-bonded to a first package substrate. A second substrate to which a second IC chip is flip-chip bonded is then electrically coupled to the first substrate by through-molding vias. Within the PoP assembly, the second IC chip may be disposed back-to-back with the center-molded IC chip so as to occupy the recess framed by the molding compound.

An electrode connection structure includes: a first electrode of an electrical circuit; and a second electrode of the electrical circuit that is electrically connected to the first electrode. The first and second electrodes are oppositely disposed in direct or indirect contact with each other. A plated lamination is substantially uniformly formed by plating process from a surface of a contact region and opposed surfaces of the first and second electrodes. A void near the surface of the contact region is filled by formation of the plated lamination. Portions of the plated lamination formed from the opposed surfaces of the first and second electrodes in a region other than the contact region are not joined together.

Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.