This mounting apparatus is provided with: a plurality of bonding stations each comprising a bonding apparatus for bonding a semiconductor chip onto a substrate wafer, and a chip supply apparatus for supplying the semiconductor chip to the bonding apparatus; and a single wafer transfer apparatus which transfers the substrate wafer in order to supply the substrate wafer to each of the plurality of bonding stations and to collect the substrate wafer from each of the plurality of bonding stations.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

An industrial-scale system and method for handling precisely aligned and centered semiconductor substrate (e.g., wafer) pairs for substrate-to-substrate (e.g., wafer-to-wafer) aligning and bonding applications is provided. Some embodiments include an aligned substrate transport device having a frame member and a spacer assembly. The centered semiconductor substrate pairs may be positioned within a processing system using the aligned substrate transport device, optionally under robotic control. The centered semiconductor substrate pairs may be bonded together without the presence of the aligned substrate transport device in the bonding device. The bonding device may include a second spacer assembly which operates in concert with that of the aligned substrate transport device to perform a spacer hand-off between the substrates. A pin apparatus may be used to stake the substrates during the hand-off.

Provided is a semiconductor chip mounting tape. The semiconductor chip mounting tape comprises a tape base film including first and second surfaces opposite to each other; and an adhesive film including a third surface facing the first surface of the tape base film, and a fourth surface opposite to the third surface, wherein the adhesive film includes a plurality of voids therein, and the fourth surface of the adhesive film may be adhered to a semiconductor chip.

A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

Exemplified microscale selective laser sintering (μ-SLS or micro-SLS) systems and methods facilitate modeling of the nanoparticle powder bed by simulating the interactions between particles during the powder spreading operation. In particular, the exemplified methods and system use multiscale modeling techniques to accurately predict the formation and mechanical/electrical properties of parts produced by selective laser sintering of powder beds. Discrete element modeling is used for nanoscale particle interactions by implementing the different forces dominant at nanoscale. A heat transfer analysis is used to predict the sintering of individual particles in the powder beds in order to build up a complete structural model of the parts that are being produced by the SLS process.