H01L2224/75101

MODULAR MAINFRAME LAYOUT FOR SUPPORTING MULTIPLE SEMICONDUCTOR PROCESS MODULES OR CHAMBERS

Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates, includes: a first equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates, a second EFEM having one or more loadports; and a plurality of atmospheric modular mainframes (AMMs) coupled to each other and having a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM, wherein each of the plurality of AMMs include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot, the one or more process chambers, and a buffer disposed in an adjacent AMM of the plurality of AMMs.

Bonding method of package components and bonding apparatus

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

Batch processing oven and method

The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

APPARATUS, SYSTEM, AND METHOD OF PROVIDING UNDERFILL ON A CIRCUIT BOARD
20220087084 · 2022-03-17 · ·

An apparatus, system and method for dispensing underfill to components on a printed circuit board. The apparatus, system and method may include an underfill chamber having an input through which the printed circuit board is received; at least one dispensing robot capable of dispensing the underfill to the components; a lower heater suitable to substantially evenly heat at least half of or the entirety of an underside of the printed circuit board once the printed circuit board is within the underfill chamber; and an overhead heater capable of heating up to half of a topside of the printed circuit board once the printed circuit board is within the underfill chamber.

SILVER NANOPARTICLES SYNTHESIS METHOD FOR LOW TEMPERATURE AND PRESSURE SINTERING

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200° C. and in some embodiments at about 150° C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

Methods of bonding of semiconductor elements to substrates, and related bonding systems

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

Methods of bonding of semiconductor elements to substrates, and related bonding systems

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

Positioning device

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

PRESSING GROUP FOR A SINTERING PRESS FOR SINTERING ELECTRONIC COMPONENTS ON A SUBSTRATE
20210170708 · 2021-06-10 ·

A pressing group for a sintering press to carry out sintering of electronic components on a substrate has a multi-stem cylinder having a front head and a rear head together delimiting a compression chamber. In the front head pressing stems are slidingly supported, parallel and independent from each other, the rear ends of the pressing stems protruding into the compression chamber. In the compression chamber, an actuating flat gasket extends over the rear ends of the pressing stems. The actuating flat gasket is fixed to the front head by an anchoring frame engaging a peripheral portion of the actuating flat gasket, the anchoring frame being completely housed in the compression chamber so that the pressurized fluid also acts on the anchoring frame.

BONDING APPARATUS AND BONDING METHOD
20210272924 · 2021-09-02 · ·

A bonding apparatus according to the present embodiment includes a first holder and a second holder. The first holder holds a first substrate. The second holder includes a plurality of suction portions that suck a second substrate and that are arranged on concentric circles about a center of the second substrate substantially evenly. The second holder bonds the second substrate to the first substrate while opposing the second substrate to the first substrate. A first gas supply portion has a plurality of first gas supply ports to supply gas toward a bonding position between the first substrate and the second substrate. The first gas supply ports are provided to correspond to at least a part of outermost suction portions that are farthest ones of the suction portions from a center of the second holder, and are concentrically arranged on a circle about the center substantially evenly.