The present invention includes: a position detection unit (55) detecting positions of semiconductor chips and storing each detected position in a position database (56); a position correction unit (57) outputting a corrected bonding position; and a bonding control unit (58) performing bonding of the semiconductor chips based on the corrected bonding position input from the position correction unit (57). The position correction unit (57) calculates position shift amounts between the semiconductor chips of respective stages and an accumulated position shift amount, and when the accumulated position shift amount is greater than or equal to a predetermined threshold value, corrects the position of the semiconductor chip by the accumulated position shift amount and outputs it as the corrected bonding position, and the bonding control unit (58) performs bonding of the semiconductor chip of the next stage at the corrected bonding position input from the position correction unit.

A method of preparing a substrate for substrate bonding is provided. The method comprises: forming a recess in a substrate surface of the substrate, and forming a bondable dielectric layer on the substrate surface of the substrate. The bondable dielectric layer has a bonding surface on an opposite side of the bondable dielectric layer to the substrate surface, wherein the recess and the bondable dielectric layer define a dielectric cavity having a dielectric cavity volume. A plug is formed configured to make electrical contact to the substrate in the dielectric cavity volume. The plug has a plug volume which is less than the dielectric cavity volume, wherein the plug extends from the dielectric cavity beyond the bonding surface in a direction generally normal to the bonding surface. The plug is coined by compressing the substrate between opposing planar surfaces such that a contact surface of the plug is made co-planar with the bonding surface.

According to one embodiment, in a semiconductor manufacturing apparatus, a controller relatively moves a bonding tool and a stage close to each other while causing a semiconductor chip to adhere by suction to a surface via a tape using at least a first suction structure in a first period. In a second period, the controller controls the temperature of the bonding tool to a first target temperature while keeping substantially equal to a target pressure a pressure applied to the semiconductor chip by the bonding tool. In a third period, the controller controls a relative distance between the bonding tool and the stage so that the pressure applied to the semiconductor chip by the bonding tool is kept equal to the target pressure and controls the temperature of the bonding tool to a second target temperature. The second target temperature is higher than the first target temperature.

A flexible circuit film bonding apparatus includes: a stage configured to support a TFT substrate; a pressing head configured to press and heat a flexible circuit film attached on the TFT substrate with an anisotropic conductive film interposed therebetween; a backup plate configured to support and heat the TFT substrate positioned below the flexible circuit film; and a heating control unit configured to control a temperature of a lower surface of the pressing head and an upper surface of the backup plate, wherein the temperature of the upper surface of the backup plate is less than 170 degrees Celsius.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

According to one embodiment, in a semiconductor manufacturing apparatus, a controller relatively moves a bonding tool and a stage close to each other while causing a semiconductor chip to adhere by suction to a surface via a tape using at least a first suction structure in a first period. In a second period, the controller controls the temperature of the bonding tool to a first target temperature while keeping substantially equal to a target pressure a pressure applied to the semiconductor chip by the bonding tool. In a third period, the controller controls a relative distance between the bonding tool and the stage so that the pressure applied to the semiconductor chip by the bonding tool is kept equal to the target pressure and controls the temperature of the bonding tool to a second target temperature. The second target temperature is higher than the first target temperature.

A semiconductor device includes a semiconductor element, a support member, and a bonding layer interposed between the semiconductor element and the support member, wherein the bonding layer contains an alloy of first metal and second metal.

A semiconductor device includes a substrate having a plurality of pads on a surface of the substrate, a semiconductor chip that includes a plurality of metal bumps connected to corresponding pads on the substrate, a first resin layer between the surface of the substrate and the semiconductor chip, a second resin layer between the substrate and the semiconductor chip and between the first resin layer and at least one of the metal bumps, and a third resin layer on the substrate and above the semiconductor chip.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.