A method for manufacturing an electronic component includes positioning a first surface of a first component facing a second surface of a second component in a first state. The first surface has a first pad having a first center. The second surface has a second pad having a second center. At least one of the first or second pads includes a metal member. The method includes melting the metal member and moving the first and second components until the melted metal member contacts both pads, moving at least one of the first or second components in a direction along the first surface, and solidifying the metal member in a second state. A first distance in a direction along the first surface between the first and second centers in the first state is longer than a second distance in the direction between the first and second centers in the second state.

An electronic component mounting device, includes a stage in which a plurality of stage portions are defined, a first heater provided in the plurality of stage portions respectively, and the first heater which can be controlled independently, a mounting head arranged over the stage, and a second heater provided in the mounting head.

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

A radiative heat collective bonder or gangbonder for packaging a semiconductor die stack is provided. The bonder generally includes a shroud positioned at least partially around the die stack and a radiative heat source positioned inward of the shroud and configured to emit a radiative heat flux in a direction away from the shroud. The bonder may further include a bondhead configured to contact the backside of the topmost die in the die stack and optionally include another bondhead configured to contact a substrate beneath the die stack. The radiative heat source may be configured to direct the radiative heat flux to at least a portion of the die stack to reduce a vertical temperature gradient in the die stack. One or both of the bondheads may be configured to concurrently direct a conductive heat flux into the die stack.

A uniform pressure gang bonding device and fabrication method are presented using an expandable upper chamber with an elastic surface. Typically, the elastic surface is an elastomer material having a Young's modulus in a range of 40 to 1000 kilo-Pascal (kPA). After depositing a plurality of components overlying a substrate top surface, the substrate is positioned over the lower plate, with the top surface underlying and adjacent (in close proximity) to the elastic surface. The method creates a positive upper chamber medium pressure differential in the expandable upper chamber, causing the elastic surface to deform. For example, the positive upper chamber medium pressure differential may be in the range of 0.05 atmospheres (atm) and 10 atm. Typically, the elastic surface deforms between 0.5 millimeters (mm) and 20 mm, in response to the positive upper chamber medium pressure differential.

In one example, a method to manufacture a semiconductor device comprises providing an electronic component over a substrate, wherein an interconnect of the electronic component contacts a conductive structure of the substrate, providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block with a window, and heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure. Other examples and related methods are also disclosed herein.

A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.

A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A bonding apparatus and method includes: a stage configured to fix a first electric component; a pressing unit configured to press a conductive adhesive film and a second electric component onto the first electric component; a driver configured to control movement of the pressing unit along a direction; and a plurality of sensors at different positions on the stage and configured to sense a change in capacitance with the pressing unit, wherein the pressing unit includes a flat metal material in first regions facing the plurality of sensors.