A method for manufacturing a semiconductor device includes forming a bonding layer on a back-surface of a semiconductor element, mounting the semiconductor element on a base member, and bonding the semiconductor element to the base member by pressing the semiconductor element on the base member. The bonding layer includes tin. The base member includes a plating layer that includes silver and tin. The base member is heated at a prescribed temperature. The semiconductor element is placed on the base member so that the bonding layer contacts the plating layer on the base member.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, including various adhesives applications.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, such as color enhancement, and color enhancement structures containing the same.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, especially in the field of solar cells and other energy conversion devices.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, especially in the field of solar cells and other energy conversion devices.

A method and apparatus for soldering a chip (1a) to a substrate (3). A chip carrier (8) is provided between a flash lamp (5) and the substrate (3). The chip (1a) is attached to the chip carrier (8) on a side of the chip carrier (8) facing the substrate (3). A solder material (2) is disposed between the chip (1a) and the substrate (3). The flash lamp (5) generates a light pulse (6) for heating the chip (1a). The heating of the chip (1a) causes the chip (1a) to be released from the chip carrier (8) towards the substrate (3). The solder material (2) is at least partially melted by contact with the heated chip (1a) for attaching the chip (1a) to the substrate (3).

An apparatus and method for soldering chips to a substrate. A substrate and two or more different chips having different heating properties are provided. A solder material is disposed between the chips and the substrate. A flash lamp generates a light pulse for heating the chips, wherein the solder material is at least partially melted by contact with the heated chips. A masking device is disposed between the flash lamp and the chips causing different light intensities in different areas of the light pulse passing the masking device thereby heating the chips with different light intensities. This may compensate the different heating properties to reduce a spread in temperature between the chips as a result of the heating by the light pulse.

A hybrid electronic assembly includes a substrate having conductive circuit tracings, and includes at least one opening defined within length and width dimensions of the substrate. An electronic circuit component which has conductive circuit tracings, and is located within the at least one opening of the substrate. An alignment area where a first surface of the substrate and a first surface of the electronic circuit component are aligned in a substantially planar flat relationship with the electronic circuit component. A non-alignment area where a second surface of the substrate and a second surface of the electronic circuit component are in a non-aligned relationship. A bonding material formed on at least a portion of the second surface of the substrate and on at least a portion of the electronic circuit component and where conductive traces are formed between the first surface of the substrate and the first surface of the electronic circuit component, providing electrical connections between the substrate and the electronic circuit component.

A substrate (3) and two or more different chips (1a, 1b) having different heating properties (e.g. caused by different dimensions (surface area and/or thickness), heat capacity (C1, C2), absorptivity, conductivity, number and/or size of solder bonds) are provided. A solder material (2) is disposed between the chips (1a, 1b) and the substrate (3). A flash lamp (5) generates a light pulse (6) for heating the chips (1a, 1b), wherein the solder material (2) is at least partially melted by contact with the heated chips (1a, 1b). A masking device (7) is disposed between the flash lamp (5) and the chips (1a, 1b) causing different light intensities (1a, 1b) in different areas (6a, 6b) of the light pulse (6) passing the masking device (7), thereby heating the chips (1a, 1b) with different light intensities (1a, 1b). This may compensate the different heating properties to reduce a spread in temperature between the chips (1a, 1b) as a result of the heating by the light pulse (6). The chips (1a, 1b) may be releasably carried by a chip carrier disposed between the flash lamp (5) and the substrate (3) before being positioned on the substrate (3), wherein the light (6a, 6b) of the light pulse (6) transmitted by the masking device (7) is projected onto the chips (1a, 1b) held by the chip carrier for heating the chips (1a, 1b), releasing them from the chip carrier and transferring them to the substrate (3), wherein the heated chips (1a, 1b) cause melting of the solder material (2) between the chips (1a, 1b) and the substrate (3) for attaching the chips (1a, 1b) to the substrate (3).

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, particularly medical uses for treatment of cell proliferation disorders.