Patent classifications
H01L2224/75261
DEVICE AND METHOD FOR REEL-TO-REEL LASER REFLOW
The present invention relates to a reel-to-reel layer reflow method, which emits a uniformized laser beam, which can easily adjust the emission area, and which is for the purpose of improving productivity. An embodiment of the present invention provides a reel-to-reel layer reflow method comprising the steps of: a) transferring a substrate, which has been wound in a roll type, to one side while unwinding the same; b) forming a solder portion on the substrate; c) seating an emission target element on the solder portion and seating a non-emission target element on the substrate; d) surface-emitting a laser beam to the solder portion, on which the emission target element is seated, such that the emission target element is attached to the substrate; e) inspecting the substrate structure manufactured through said step d); and f) winding the substrate structure in a roll type.
SELECTIVELY BONDING LIGHT-EMITTING DEVICES VIA A PULSED LASER
The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.
Transfer method and transfer apparatus
A pick-up device has a caves. A first magnetic force is capable of attracting micro-devices to move toward the caves of the pick-up device. The pick-up device is disposed on a pick-up roller, and the pick-up roller drives the caves of the pick-up device to move relative to the micro-devices. Given that the first magnetic force is provided, the pick-up device compresses the micro-devices, so that the micro-devices are fitted in place the micro-devices into the caves of the pick-up device, wherein a shape of the caves is the same as a shape of the micro-devices. The micro-devices are transferred from the caves of the pick-up device to a receiving device.
High speed handling of ultra-small chips by selective laser bonding and debonding
Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 μm to about 100 μm, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.
Methods of bonding semiconductor elements to a substrate, including use of a reducing gas, and related bonding machines
A method of bonding a semiconductor element to a substrate includes: carrying a semiconductor element including a plurality of first electrically conductive structures with a bonding tool; supporting a substrate including a plurality of second electrically conductive structures with a support structure; providing a reducing gas in contact with each of the plurality of first conductive structures and the plurality of second conductive structures; establishing contact between corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures; moving at least one of the semiconductor element and the substrate such that the corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures are separated; re-establishing contact between the plurality of first conductive structures and the plurality of second conductive structures; and bonding the plurality of first conductive structures to the respective ones of the plurality of second conductive structures.
Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating
The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.
Systems for direct transfer of semiconductor device die
A system for performing a direct transfer of a semiconductor device die includes a first conveyance mechanism to convey a first substrate, and a second conveyance mechanism to convey a second substrate with respect to the first substrate. The first substrate includes a first side and a second side, and the semiconductor device die is disposed on the first side of the first substrate. The second conveyance mechanism includes a first portion and a second portion to clamp the second substrate adjacent to a first side of the first substrate. The first portion of the second conveyance mechanism has a concave shape and the second portion of the second conveyance mechanism has a convex counter shape corresponding to the concave shape of the first portion. The system also includes a transfer mechanism disposed adjacent to the first conveyance mechanism to effectuate the direct transfer.
Direct transfer of semiconductor devices from a substrate
A method includes loading a wafer tape into a first frame, the wafer tape having a first side and a second side, a first semiconductor device die being disposed on the first side of the wafer tape. A substrate is loaded into a second frame, the substrate including a second semiconductor device die onto which the first semiconductor device die is to be transferred. A needle is oriented to a position adjacent to the second side of the wafer tape, the needle extending in a direction toward the wafer tape, and a needle actuator connected to the needle is activated to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.
CURING PRE-APPLIED AND LASER-ABLATED UNDERFILL VIA A LASER
The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.
Laser bonding apparatus for three-dimensional molded sculptures
Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.